サプライチェーン
Harmonized Tariff Schedule (HTS) Code8541.10.0080
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusPRODUCTION (Last Updated: 5 years ago)
関連部品
GeneSiC SemiconductorMBRT200100
100V 200A Three Tower Silicon Rectifier Module - Schottky (Standard Configuration)
GeneSiC SemiconductorMBRT40060R
60V 400A Three Tower Silicon Rectifier Module - Schottky (Reverse Configuration)
説明
GeneSiC Semiconductor MBR20060CTの詳細は販売業者から提供されます。
60V 200A Twin Tower Silicon Rectifier Module - Schottky (Standard Configuration)
Rectifier Diode, Schottky, 1 Phase, 2 Element, 100A, 60V V(RRM), Silicon
Schottky Diodes & Rectifiers 60V 200A Schottky Recovery
DIODE MOD SCHOTT 60V 200A 2TOWER
Schottky Rectifier, Common Cathode, 60V, 200A, 2-Tower; Repetitive Peak Reverse Voltage:60V; Average Forward Current:200A; Forward Voltage Max:750Mv; Diode Module Configuration:1 Pair Common Cathode; Diode Case Style:Twin Tower Rohs Compliant: Yes |Genesic MBR20060CT
メーカーの別名
GeneSiC Semiconductorは世界中でいくつかのブランドを持っており、販売業者が代替名として使用するかもしれません。 GeneSiC Semiconductor は以下の名前でも知られているかもしれません：
- GENESIC
- GENESIC SEMI
- GENESIC SEMICONDUCTOR INC
技術仕様
Physical
Case/PackageModule
MountChassis Mount
Number of Pins3
Number of Terminals2
Technical
Average Rectified Current200 A
Element ConfigurationCommon Cathode
Forward Current200 A
Forward Voltage750 mV
Max Forward Surge Current (Ifsm)1.5 kA
Max Operating Temperature150 °C
Max Output Current100 A
Max Repetitive Reverse Voltage (Vrrm)60 V
Max Reverse Leakage Current1 µA
Max Reverse Voltage (DC)60 V
Max Surge Current1.5 kA
Min Operating Temperature-55 °C
Number of Elements2
PackagingBulk
Peak Reverse Current5 mA
Reverse Standoff Voltage60 V