The FMAM5101F is a temperature compensated RF amplifier with an integrated heatsink assembly that covers a broadband frequency from 0.5 GHz to 4 GHz. The GaAs FET design utilizes PIN diode compensation circuitry that adjusts gain levels as the device is exposed to temperature variations. At high temperatures, the gain level will be about 1 to 1.5 dB lower and at low temperatures the gain level will be about 1 to 1.5 dB higher. The gain level will always be higher than the minimum specified gain level of 35 dB over the full operational temperature range of -55°C to +85°C. Impressive typical performance for the 50 ohm design includes 3.0dB Noise Figure, +21dBm P1dB, and 1.85:1 VSWR. DC Bias Voltage ranges from +12V to +15V with 350 mA DC current. The rugged and compact Mil Grade aluminum package supports SMA female spark plug connectors, and is designed to meet a series of Mil-STD-202 environmental test conditions including Altitude, Vibration, Humidity, and Shock.