onsemi FQD2N60CTF

Power Field-Effect Transistor, 1.9A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
$ 0.509
Obsolete

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データシート & ドキュメント

onsemi FQD2N60CTFのデータシートとメーカー資料をダウンロードする。

IHS

Datasheet9ページ21年前

onsemi

HQonline

DigiKey

Fairchild Semiconductor

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サプライチェーン

Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2004-07-27
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2011-03-02
LTD Date2011-09-02

関連部品

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N-channel 600 V, 4 Ohm typ., 2 A, SuperMESH3(TM) Power MOSFET in DPAK package
Single N-Channel 600 V 4.4 Ohms Surface Mount Power Mosfet - TO-252
Single N-Channel 600 V 4.4 Ohms Surface Mount Power Mosfet - DPAK (TO-252)
STMicroelectronicsSTD2HNK60Z
N-channel 600 V - 4.4 Ω - 2 A - TO-92/TO-220FP/DPAK/IPAK Zener-protected SuperMESH™2; Power MOSFET
N-Channel Power MOSFET, QFET®, 600 V, 2.4 A, 3.4 Ω, DPAK
STMicroelectronicsSTD3NK50ZT4
N-CHANNEL 500V - 2.8 Ohm - 2.3A Zener-Protected SuperMESH MOSFET

説明

onsemi FQD2N60CTFの詳細は販売業者から提供されます。

Power Field-Effect Transistor, 1.9A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
N-Channel QFET® MOSFET 600V, 1.9A, 4.7Ω
Transistor; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:600V; Continuous Drain Current, Id:1.9mA; On Resistance, Rds(on):3.6ohm; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:4V
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.

メーカーの別名

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  • onsemi / Fairchild
  • MOT/ON SEMI
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  • ON Semiconductor Corporation
  • ON4
  • ON Semi - ON Semiconductor
  • ON SEMICONDUCT
  • ON-SEMI SCG
  • ON Semiconductor Inc.
  • onsemiconductor
  • On Semiconductor Ltd