onsemi FGB30N6S2
$ 0.979
Obsolete
サプライチェーン
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2001-08-10
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2008-01-03
LTD Date2008-07-03
関連部品
onsemiHGT1S7N60A4DS
Insulated Gate Bipolar Transistor, 34A I(C), 600V V(BR)CES, N-Channel, TO-263AB
onsemiSGW23N60UFDTM
Insulated Gate Bipolar Transistor, 23A I(C), 600V V(BR)CES, N-Channel, TO-263AB
説明
onsemi FGB30N6S2の詳細は販売業者から提供されます。
Tube Surface Mount N-CHANNEL SINGLE IGBT Transistor 2.5V @ 15V 12A 45A 167W 6ns/40ns
600V, SMPS II Series N-Channel IGBT | IGBT 600V 45A 167W TO263AB
Insulated Gate Bipolar Transistor, 45A I(C), 600V V(BR)CES, N-Channel, TO-263AB
TO-263AB, SINGLE, 600V SIZE 3 N-CH SMPS II IGBT
メーカーの別名
onsemiは世界中でいくつかのブランドを持っており、販売業者が代替名として使用するかもしれません。 onsemi は以下の名前でも知られているかもしれません：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技術仕様
Physical
Case/PackageTO-263-3
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Collector Emitter Breakdown Voltage600 V
Collector Emitter Saturation Voltage2 V
Collector Emitter Voltage (VCEO)600 V
Current Rating45 A
Element ConfigurationSingle
Fall Time100 ns
Max Collector Current45 A
Max Operating Temperature150 °C
Max Power Dissipation167 W
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation167 W
Rise Time10 ns
Voltage Rating (DC)600 V