サプライチェーン
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2005-06-03
Lifecycle StatusEOL (Last Updated: 2 months ago)
LTB Date2026-10-28
LTD Date2027-04-28
説明
Diodes Inc. ZXTP2012ASTZの詳細は販売業者から提供されます。
ZXTP2012A Series PNP 60 V 1 A Medium Power Transistor Through Hole - TO-92-3
Small Signal Bipolar Transistor, 3.5A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon
TRANS PNP 60V 3.5A TO92-3 / 60V PNP LOW SATURATION MEDIUM POWER TRANSISTOR IN E-LINE
Bipolar Transistors - BJT PNP 60V 3.5A 3-PIN
メーカーの別名
Diodes Inc.は世界中でいくつかのブランドを持っており、販売業者が代替名として使用するかもしれません。 Diodes Inc. は以下の名前でも知られているかもしれません：
- Diodes Incorporated
- DIODE
- DII
- DIO
- DIODE INC
- DC COMPONENTS
- DIOD
- YENYO
- Diodes Zetex
- MICRO COM
- MICRO ELECTRONIC INS
- Diodes Inc / Zetex
- DIODE INCORPORATED
- DIODES ZET
- DIODSE
- DINC
- Diodes Inc Inc
- DIOINC
- FORMOSA MS
- DIODES INC(RoHS)
- ZETEX (DIODES INC)
- DIODES INC/VISHAY
- Diodes Incorporation
- ZETEXDIODES
- DIODES INC/VISH
- Pericom
- Diodes Incorporated
技術仕様
Physical
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Collector Base Voltage (VCBO)100 V
Collector Emitter Breakdown Voltage60 V
Collector Emitter Saturation Voltage-210 mV
Collector Emitter Voltage (VCEO)60 V
Element ConfigurationSingle
Emitter Base Voltage (VEBO)7 V
Frequency120 MHz
Gain Bandwidth Product120 MHz
hFE Min10
Max Breakdown Voltage60 V
Max Collector Current3.5 A
Max Frequency120 MHz
Max Operating Temperature150 °C
Max Power Dissipation1 W
Min Operating Temperature-55 °C
Number of Elements1
PolarityPNP
Power Dissipation1 W
Transition Frequency120 MHz
Dimensions
Height4.01 mm
Length4.77 mm
Width2.41 mm
コンプライアンス
環境分類
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
準拠ステートメント