サプライチェーン
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2007-01-25
Lifecycle StatusEOL (Last Updated: 1 week ago)
LTB Date2026-10-28
LTD Date2027-04-28
関連部品
InfineonBSS84PH6433XTMA1
BSS84P Series 60 V 8 Ohm P-Channel SIPMOS® Small-Signal-Transistor - SOT-23-3
説明
Diodes Inc. ZXMP2120FFTAの詳細は販売業者から提供されます。
P-Channel 200 V 28 Ohm Power MOSFET Surface Mount - SOT-23F
Trans MOSFET P-CH 200V 0.137A Automotive 3-Pin SOT-23F T/R
Mosfet, P-Ch, 200V, 0.137A, Sot-23F Rohs Compliant: Yes |Diodes Inc. ZXMP2120FFTA
MOSFET P-CHANNEL 200V 0.137A SOT23F
Power Field-Effect Transistor, 0.137A I(D), 200V, 28ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
メーカーの別名
Diodes Inc.は世界中でいくつかのブランドを持っており、販売業者が代替名として使用するかもしれません。 Diodes Inc. は以下の名前でも知られているかもしれません：
- Diodes Incorporated
- DIODE
- DII
- DIO
- DIODE INC
- DC COMPONENTS
- DIOD
- YENYO
- Diodes Zetex
- MICRO COM
- MICRO ELECTRONIC INS
- Diodes Inc / Zetex
- DIODE INCORPORATED
- DIODES ZET
- DIODSE
- DINC
- Diodes Inc Inc
- DIOINC
- FORMOSA MS
- DIODES INC(RoHS)
- ZETEX (DIODES INC)
- DIODES INC/VISHAY
- Diodes Incorporation
- ZETEXDIODES
- DIODES INC/VISH
- Pericom
- Diodes Incorporated
技術仕様
Physical
Case/PackageSOT-23-3
MountSurface Mount
Number of Pins3
Number of Terminals3
Weight7.994566 mg
Technical
Continuous Drain Current (ID)137 mA
Drain to Source Breakdown Voltage-200 V
Drain to Source Resistance28 Ω
Drain to Source Voltage (Vdss)200 V
Element ConfigurationSingle
Fall Time15 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance100 pF
Max Operating Temperature150 °C
Max Power Dissipation1 W
Min Breakdown Voltage200 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation1.5 W
Rds On Max28 Ω
Resistance28 Ω
Rise Time15 ns
Turn-Off Delay Time12 ns
Turn-On Delay Time7 ns
Dimensions
Height1 mm
Length3 mm
Width1.7 mm
コンプライアンス
環境分類
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
準拠ステートメント