説明
Diodes Inc. ZXMN6A07F.の詳細は販売業者から提供されます。
Trans MOSFET N-CH 60V 1.2A Automotive 3-Pin SOT-23
Small Signal Field-Effect Transistor, 1.1A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, SOT-23, 3 PIN
N CHANNEL MOSFET, 60V, 1A, SOT-23; Transistor Polarity:N Channel; Continuous Drain Current Id:1A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.4ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V ;RoHS Compliant: Yes
MOSFET, N, SOT-23; Transistor Polarity:N; Max Current Id:1A; Max Voltage Vds:60V; On State Resistance:0.4ohm; Rds Measurement Voltage:10V; Max Voltage Vgs:3V; Power Dissipation:806mW; Transistor Case Style:SOT-23; No. of Pins:3; SVHC:No SVHC (18-Jun-2010); Case Style:SOT-23; Cont Current Id:1A; Current Temperature:25°C; Max Junction Temperature Tj:150°C; Max On State Resistance:0.4ohm; Max Power Dissipation Ptot:625mW; Min Junction Temperature, Tj:-55°C; Min Voltage Vgs th:1V; No. of Transistors:1; Power Dissipation Pd:625mW; Pulse Current Idm:4A; SMD Marking:7N6; Termination Type:SMD; Transistor Type:MOSFET; Typ Voltage Vds:60V; Typ Voltage Vgs th:3V; Voltage Vgs Rds on Measurement:10V
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- MICRO ELECTRONIC INS
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- Diodes Incorporated
技術仕様
Physical
Case/PackageSOT-23
Number of Pins3
Technical
Continuous Drain Current (ID)1 A
Drain to Source Voltage (Vdss)60 V
Max Operating Temperature150 °C
Max Power Dissipation625 mW
Min Operating Temperature-55 °C
Power Dissipation806 mW
Resistance400 mΩ
TerminationSMD/SMT