サプライチェーン
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2010-12-02
Lifecycle StatusProduction (Last Updated: 5 months ago)
関連部品
Diodes Inc.ZXMC3AMCTA
Dual MOSFET, Complementary N and P Channel, 30 V, 30 V, 2.9 A, 2.9 A, 0.1 ohm
onsemiNTMFD4C50NT1G
MOSFET N-CH 30V 12A 8DFN DL / 12A (Ta) Surface Mount 8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical)
説明
Diodes Inc. ZXMN3AMCTAの詳細は販売業者から提供されます。
ZXMN3AMC Series 30 V 120 mOhm 2.9A Dual N-Ch Enhancement Mode Mosfet-DFN3020-B-8
Transistor MOSFET Array Dual N-CH 30V 3.7A 8-Pin DFN3020B T/R
Trans MOSFET N-CH 30V 2.9A Automotive 8-Pin DFN EP T/R
Power Field-Effect Transistor, 2.9A I(D), 30V, 0.12ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
メーカーの別名
Diodes Inc.は世界中でいくつかのブランドを持っており、販売業者が代替名として使用するかもしれません。 Diodes Inc. は以下の名前でも知られているかもしれません：
- Diodes Incorporated
- DIODE
- DII
- DIO
- DIODE INC
- DC COMPONENTS
- DIOD
- YENYO
- Diodes Zetex
- MICRO COM
- MICRO ELECTRONIC INS
- Diodes Inc / Zetex
- DIODE INCORPORATED
- DIODES ZET
- DIODSE
- DINC
- Diodes Inc Inc
- DIOINC
- FORMOSA MS
- DIODES INC(RoHS)
- ZETEX (DIODES INC)
- DIODES INC/VISHAY
- Diodes Incorporation
- ZETEXDIODES
- DIODES INC/VISH
- Pericom
- Diodes Incorporated
技術仕様
Physical
Case/PackageDFN
MountSurface Mount
Number of Pins8
Number of Terminals8
Technical
Continuous Drain Current (ID)2.9 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance120 mΩ
Drain to Source Voltage (Vdss)30 V
Element ConfigurationDual
Fall Time2.9 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance190 pF
Max Operating Temperature150 °C
Max Power Dissipation2.45 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Number of Channels2
Number of Elements2
Power Dissipation2.45 W
Rds On Max120 mΩ
Rise Time2.3 ns
Turn-Off Delay Time6.6 ns
Turn-On Delay Time1.7 ns
コンプライアンス
環境分類
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
準拠ステートメント