価格と在庫
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Newark | ZXMN10B08E6TA | 4 | 5 | Cut Tape | ||||||||
| TME | ZXMN10B08E6TA | 0 | 1 | 10h | ||||||||
| Avnet | ZXMN10B08E6TA | 0 | 3K | 4d | ||||||||
| RS (Formerly Allied Electronics) | ZXMN10B08E6TA | 0 | 10 | Bulk | 2h | |||||||
| Future Electronics | ZXMN10B08E6TA | 0 | 3K | Tape & Reel |
サプライチェーン
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2003-05-12
Lifecycle StatusProduction (Last Updated: 4 months ago)
関連部品
Diodes Inc.ZXMN10A08E6TA
MOSFET N-CH 100V 1.5A SOT-23-6 / Trans MOSFET N-CH 100V 3.5A 6-Pin SOT-26 T/R
Diodes Inc.DMN10H220LVT-7
Mosfet, N-Ch, 100V, 2.24A, Tsot-26 Rohs Compliant: Yes |Diodes Inc. DMN10H220LVT-7
説明
Diodes Inc. ZXMN10B08E6TAの詳細は販売業者から提供されます。
ZXMN10B Series 100 V 0.23 Ohm N-Channel Enhancement Mode MOSFET - SOT-23-6
Power MOSFET, N Channel, 100 V, 1.6 A, 0.23 ohm, SOT-26, Surface Mount
Trans MOSFET N-CH 100V 1.6A 6-Pin SOT-23 T/R
MOSFET N-CHANNEL 100V 1.9A SOT23-6
90004001,场效应管, MOSFET, N沟道, 100V, 1.6A, 150度 C, 1.1W;
MOSFET, N-CH, 100V, 1.6A, SOT-26 ROHS COMPLIANT: YES
Power Field-Effect Transistor, 1.6A I(D), 100V, 0.23ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
メーカーの別名
Diodes Inc.は世界中でいくつかのブランドを持っており、販売業者が代替名として使用するかもしれません。 Diodes Inc. は以下の名前でも知られているかもしれません：
- Diodes Incorporated
- DIODE
- DII
- DIO
- DIODE INC
- DC COMPONENTS
- DIOD
- YENYO
- Diodes Zetex
- MICRO COM
- MICRO ELECTRONIC INS
- Diodes Inc / Zetex
- DIODE INCORPORATED
- DIODES ZET
- DIODSE
- DINC
- Diodes Inc Inc
- DIOINC
- FORMOSA MS
- DIODES INC(RoHS)
- ZETEX (DIODES INC)
- DIODES INC/VISHAY
- Diodes Incorporation
- ZETEXDIODES
- DIODES INC/VISH
- Pericom
- Diodes Incorporated
技術仕様
Physical
Case/PackageSOT-23-6
MountSurface Mount
Number of Pins6
Number of Terminals6
Weight14.996898 mg
Technical
Continuous Drain Current (ID)1.6 A
Current Rating1.9 A
Drain to Source Breakdown Voltage100 V
Drain to Source Resistance230 mΩ
Drain to Source Voltage (Vdss)100 V
Element ConfigurationSingle
Fall Time2.1 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance497 pF
Max Operating Temperature150 °C
Max Power Dissipation1.1 W
Min Breakdown Voltage100 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Rds On Max230 mΩ
Resistance230 mΩ
Rise Time2.1 ns
Schedule B8541290080
Turn-Off Delay Time12.1 ns
Turn-On Delay Time2.9 ns
Voltage Rating (DC)100 V
Dimensions
Height1.3 mm
Length3.1 mm
Width1.8 mm
コンプライアンス
環境分類
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
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