サプライチェーン
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2007-06-26
Lifecycle StatusObsolete (Last Updated: 4 months ago)
説明
Diodes Inc. DZT591C-13の詳細は販売業者から提供されます。
DZT591C Series 60 V 1 A 1 W PNP Surface Mount Transistor - SOT-223
Trans GP BJT PNP 60V 1A 1000mW 4-Pin(3+Tab) SOT-223 T/R
Small Signal Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon
Bipolar Transistors - BJT 1W -60V
Pwr Mid Perf Transistor Sot223 T&r 2.5K
メーカーの別名
Diodes Inc.は世界中でいくつかのブランドを持っており、販売業者が代替名として使用するかもしれません。 Diodes Inc. は以下の名前でも知られているかもしれません：
- Diodes Incorporated
- DIODE
- DII
- DIO
- DIODE INC
- DC COMPONENTS
- DIOD
- YENYO
- Diodes Zetex
- MICRO COM
- MICRO ELECTRONIC INS
- Diodes Inc / Zetex
- DIODE INCORPORATED
- DIODES ZET
- DIODSE
- DINC
- Diodes Inc Inc
- DIOINC
- FORMOSA MS
- DIODES INC(RoHS)
- ZETEX (DIODES INC)
- DIODES INC/VISHAY
- Diodes Incorporation
- ZETEXDIODES
- DIODES INC/VISH
- Pericom
- Diodes Incorporated
技術仕様
Physical
Case/PackageSOT-223
Contact PlatingTin
MountSurface Mount
Number of Pins4
Number of Terminals4
Weight7.994566 mg
Technical
Collector Base Voltage (VCBO)80 V
Collector Emitter Breakdown Voltage60 V
Collector Emitter Saturation Voltage-600 mV
Collector Emitter Voltage (VCEO)60 V
Continuous Collector Current-1 A
Element ConfigurationSingle
Emitter Base Voltage (VEBO)5 V
Frequency150 MHz
Gain Bandwidth Product150 MHz
hFE Min15
Max Breakdown Voltage60 V
Max Collector Current1 A
Max Operating Temperature150 °C
Max Power Dissipation1 W
Min Operating Temperature-55 °C
Number of Elements1
PolarityPNP
Power Dissipation1 W
Schedule B8541290080
Transition Frequency150 MHz
Dimensions
Height1.65 mm
Length6.7 mm
Width3.7 mm