価格と在庫
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Avnet | DMP56D0UFB-7 | 54,000 | 3K | 4d | ||||||||
| Newark | DMP56D0UFB-7 | 3,000 | 5 | Cut Tape | ||||||||
| Verical | DMP56D0UFB-7 | 63,000 | 3K | |||||||||
| Arrow Electronics | DMP56D0UFB-7 | 33,000 | 755 | |||||||||
| DigiKey | DMP56D0UFB-7DICT-ND | 3,649 | 1 | Cut Tape |
関連部品
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Mosfet, P-Ch, 20V, 0.7A, X2-Dfn1006 Rohs Compliant: Yes |Diodes Inc. DMP21D5UFB4-7B
説明
Diodes Inc. DMP56D0UFB-7の詳細は販売業者から提供されます。
P-Channel 50 V 6 Ohm 425 mW Enhancement Mode Mosfet - X1-DFN1006-3
Power MOSFET, P Channel, 50 V, 200 mA, 4.6 ohm, X1-DFN1006, Surface Mount
Small Signal Field-Effect Transistor, 0.2A I(D), 1-Element, P-Channel, Metal-oxide Semiconductor FET
P-CHANNEL ENHANCEMENT MODE MOSFET, 50V VDS, 8±V VGS
Diodes Inc SCT
Trans MOSFET P-CH 50V 0.2A 3-Pin X1-DFN T/R
Mosfet Bvdss: 41V~60V X1-Dfn1006-3 T&r 3K
425mW(Ta) 8V 1.2V@ 250¦ÌA 0.58nC@ 4 V 1P 50V 6¦¸@ 100mA,4V 200mA 50.54pF@25V DFN 1.08mm*675¦Ìm*480¦Ìm
MOSFET P-CH 50V 0.2A ENHANC. X-DFN1006-3
XSTR MOSFET P-CHANNEL 50V 200MA RDS
メーカーの別名
Diodes Inc.は世界中でいくつかのブランドを持っており、販売業者が代替名として使用するかもしれません。 Diodes Inc. は以下の名前でも知られているかもしれません：
- Diodes Incorporated
- DIODE
- DII
- DIO
- DIODE INC
- DC COMPONENTS
- DIOD
- YENYO
- Diodes Zetex
- MICRO COM
- MICRO ELECTRONIC INS
- Diodes Inc / Zetex
- DIODE INCORPORATED
- DIODES ZET
- DIODSE
- DINC
- Diodes Inc Inc
- DIOINC
- FORMOSA MS
- DIODES INC(RoHS)
- ZETEX (DIODES INC)
- DIODES INC/VISHAY
- Diodes Incorporation
- ZETEXDIODES
- DIODES INC/VISH
- Pericom
- Diodes Incorporated
技術仕様
Physical
Case/PackageDFN
MountSurface Mount
Number of Pins3
Technical
Continuous Drain Current (ID)200 mA
Drain to Source Resistance8 Ω
Drain to Source Voltage (Vdss)50 V
Element ConfigurationSingle
Fall Time15 ns
Gate to Source Voltage (Vgs)8 V
Input Capacitance50.54 pF
Max Operating Temperature150 °C
Max Power Dissipation425 mW
Min Operating Temperature-55 °C
Number of Elements1
PackagingTape & Reel
Rds On Max6 Ω
Rise Time6.63 ns
Schedule B8541210080
Turn-Off Delay Time21.9 ns
Turn-On Delay Time4.46 ns
Dimensions
Height480 µm
Length1.08 mm
Width675 µm
コンプライアンス
環境分類
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
準拠ステートメント