価格と在庫
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| TME | DMN62D0SFD-7 | 112 | 1 | 2h | ||||||||
| Newark | DMN62D0SFD-7 | 0 | 5 | Cut Tape | ||||||||
| Avnet | DMN62D0SFD-7 | 0 | 3K | 1d | ||||||||
| Arrow Electronics | DMN62D0SFD-7 | 0 | 3K | |||||||||
| Win Source | WS-DMN62D0SFD-7 | 51,000 | 50 | 14h |
サプライチェーン
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2011-10-03
Lifecycle StatusProduction (Last Updated: 5 months ago)
関連部品
Diodes Inc.DMN62D0LFB-7
Mosfet, N-Ch, 60V, 0.32A, X1-Dfn1006 Rohs Compliant: Yes |Diodes Inc. DMN62D0LFB-7
Diodes Inc.DMN62D0LFD-7
Mosfet, N-Ch, 60V, 0.31A, X1-Dfn1212 Rohs Compliant: Yes |Diodes Inc. DMN62D0LFD-7
Diodes Inc.DMN62D1SFB-7B
Trans Mosfet N-Ch 60V 0.41A 3-Pin Dfn T/R Rohs Compliant: Yes |Diodes Inc. DMN62D1SFB-7B
説明
Diodes Inc. DMN62D0SFD-7の詳細は販売業者から提供されます。
Mosfet, N-Ch, 60V, 0.54A, X1-Dfn1212 Rohs Compliant: Yes |Diodes Inc. DMN62D0SFD-7
Power MOSFET, N Channel, 60 V, 540 mA, 2 ohm, X1-DFN1212, Surface Mount
Trans MOSFET N-CH 60V 0.54A 3-Pin DFN T/R / MOSFET N-CH 60V 540MA 3-DFN
Single N-Channel 60 V 3 Ohm 0.87 nC 0.89 W Silicon Mosfet - UDFN-3
60V 540mA 430mW 2Ω@10V,500mA 2.5V@1mA N Channel UDFN-3(1.2x1.2) MOSFETs ROHS
Small Signal Field-Effect Transistor, 0.43A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
N-CHANNEL ENHANCEMENT MODE MOSFET, 20±V VGS
Diodes Inc SCT
MOSFET, N-CH, 60V, 0.54A, X1-DFN1212;
メーカーの別名
Diodes Inc.は世界中でいくつかのブランドを持っており、販売業者が代替名として使用するかもしれません。 Diodes Inc. は以下の名前でも知られているかもしれません：
- Diodes Incorporated
- DIODE
- DII
- DIO
- DIODE INC
- DC COMPONENTS
- DIOD
- YENYO
- Diodes Zetex
- MICRO COM
- MICRO ELECTRONIC INS
- Diodes Inc / Zetex
- DIODE INCORPORATED
- DIODES ZET
- DIODSE
- DINC
- Diodes Inc Inc
- DIOINC
- FORMOSA MS
- DIODES INC(RoHS)
- ZETEX (DIODES INC)
- DIODES INC/VISHAY
- Diodes Incorporation
- ZETEXDIODES
- DIODES INC/VISH
- Pericom
- Diodes Incorporated
技術仕様
Physical
Case/PackageDFN
MountSurface Mount
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)430 mA
Drain to Source Breakdown Voltage60 V
Drain to Source Resistance2 mΩ
Drain to Source Voltage (Vdss)60 V
Element ConfigurationSingle
Fall Time9.04 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance30.2 pF
Max Operating Temperature150 °C
Max Power Dissipation890 mW
Min Breakdown Voltage60 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Rds On Max2 Ω
Rise Time3.81 ns
Turn-Off Delay Time16 ns
Turn-On Delay Time3.95 ns