価格と在庫
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Newark | DMC3032LSD-13 | 1,615 | 5 | Cut Tape | ||||||||
| Future Electronics | DMC3032LSD-13 | 2,500 | 2500 | Tape & Reel | ||||||||
| TME | DMC3032LSD-13 | 2,180 | 1 | 12h | ||||||||
| DigiKey | DMC3032LSD-13DICT-ND | 2,694 | 1 | Cut Tape | ||||||||
| Avnet | DMC3032LSD-13 | 0 | 2500 | 2d |
サプライチェーン
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2010-07-15
Lifecycle StatusProduction (Last Updated: 4 months ago)
関連部品
Diodes Inc.DMC3028LSD-13
Dual N/P-Channel 30 V 0.045/0.041 Ohm 5.2/16.4 nC 2.1 W Silicon Mosfet - SOIC-8
Diodes Inc.DMN3024LSD-13
Mosfet, Dual, N-Ch, 30V, 6.8A Rohs Compliant: Yes |Diodes Inc. DMN3024LSD-13
Diodes Inc.DMN3024LSS-13
1.6W(Ta) 20V 3V@ 250¦ÌA 12.9nC@ 10 V 1N 30V 24m¦¸@ 7A,10V 6.4A 608pF@15V SOIC-8
InfineonIRF9410TRPBF
MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 0.03Ohm;ID 7A;SO-8;PD 2.5W;VGS +/-20V;gFS 14
説明
Diodes Inc. DMC3032LSD-13の詳細は販売業者から提供されます。
N/P Channel 30 V 32/39 mO 2.9 nC Complementary Enhancement Mode Mosfet - SOIC-8
2.5W 20V 2.1V@ 250¦ÌA 9.2nC@ 10V 2N+2P 30V 32m¦¸@ 7A,10V 8.1A,7A 404.5pF@15V SOIC-8
Mosfet, Dual, N/P-Ch, 30V, 8.1A Rohs Compliant: Yes |Diodes Inc. DMC3032LSD-13
Trans MOSFET N/P-CH 30V 5.1A/7A 8-Pin SO T/R / MOSFET N/P-CH 30V 8.1A/7A 8SOP
Power Field-Effect Transistor, 8.1A I(D), 30V, 0.032ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET
メーカーの別名
Diodes Inc.は世界中でいくつかのブランドを持っており、販売業者が代替名として使用するかもしれません。 Diodes Inc. は以下の名前でも知られているかもしれません：
- Diodes Incorporated
- DIODE
- DII
- DIO
- DIODE INC
- DC COMPONENTS
- DIOD
- YENYO
- Diodes Zetex
- MICRO COM
- MICRO ELECTRONIC INS
- Diodes Inc / Zetex
- DIODE INCORPORATED
- DIODES ZET
- DIODSE
- DINC
- Diodes Inc Inc
- DIOINC
- FORMOSA MS
- DIODES INC(RoHS)
- ZETEX (DIODES INC)
- DIODES INC/VISHAY
- Diodes Incorporation
- ZETEXDIODES
- DIODES INC/VISH
- Pericom
- Diodes Incorporated
技術仕様
Physical
Case/PackageSO
MountSurface Mount
Number of Pins8
Number of Terminals8
Weight73.992255 mg
Technical
Continuous Drain Current (ID)8.1 A
Drain to Source Breakdown Voltage-30 V
Drain to Source Resistance32 mΩ
Drain to Source Voltage (Vdss)30 V
Fall Time22.2 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance404.5 pF
Max Operating Temperature150 °C
Max Power Dissipation2.5 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Number of Channels2
Number of Elements2
Rds On Max32 mΩ
Rise Time6.5 ns
Turn-Off Delay Time50.1 ns
Turn-On Delay Time10.1 ns