関連部品
Diodes Inc.DDC114EH-7
Trans Digital BJT NPN 50V 100mA 150mW 6-Pin SOT-563 T/R / TRANS 2NPN PREBIAS 0.15W SOT563
Diodes Inc.DCX114EH-7
Small Signal Bipolar Transistor, 0.05A I(C), 50V V(BR)CEO, 2-Element, NPN and PNP, Silicon
Diodes Inc.DDA114EH-7
Small Signal Bipolar Transistor, 0.05A I(C), 50V V(BR)CEO, 2-Element, PNP, Silicon
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Transistor Silicon PNP-NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor)
説明
Diodes Inc. DCX100NS-7の詳細は販売業者から提供されます。
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN and PNP, Silicon
Trans Digital BJT NPN/PNP 100mA 6-Pin SOT-563 T/R
Bipolar Transistors - Pre-Biased 150mW R1+/-R2 R3=R4 Dual Complementary
TRANS NPN/PNP PREBIAS SOT563
メーカーの別名
Diodes Inc.は世界中でいくつかのブランドを持っており、販売業者が代替名として使用するかもしれません。 Diodes Inc. は以下の名前でも知られているかもしれません：
- Diodes Incorporated
- DIODE
- DII
- DIO
- DIODE INC
- DC COMPONENTS
- DIOD
- YENYO
- Diodes Zetex
- MICRO COM
- MICRO ELECTRONIC INS
- Diodes Inc / Zetex
- DIODE INCORPORATED
- DIODES ZET
- DIODSE
- DINC
- Diodes Inc Inc
- DIOINC
- FORMOSA MS
- DIODES INC(RoHS)
- ZETEX (DIODES INC)
- DIODES INC/VISHAY
- Diodes Incorporation
- ZETEXDIODES
- DIODES INC/VISH
- Pericom
- Diodes Incorporated
技術仕様
Physical
Case/PackageSOT-563
MountSurface Mount
Number of Terminals6
Weight3.005049 mg
Technical
Collector Emitter Breakdown Voltage50 V
Collector Emitter Voltage (VCEO)50 V
Continuous Collector Current100 mA
Element ConfigurationDual
hFE Min30
Max Breakdown Voltage50 V
Max Collector Current100 mA
Max Operating Temperature150 °C
Max Power Dissipation150 mW
Min Operating Temperature-55 °C
Number of Channels2
Number of Elements2
PolarityNPN, PNP
Transition Frequency250 MHz
Dimensions
Height600 µm
Length1.6 mm
Width1.2 mm