関連部品
ROHM2SB1260T100Q
Power Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin
ROHM2SB1260T100R
Power Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin
説明
Diodes Inc. BCX5310TAの詳細は販売業者から提供されます。
Bipolar (BJT) Transistor PNP 80 V 1 A 150MHz 1 W Surface Mount SOT-89-3
Power Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin
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Trans GP BJT PNP 80V 1A 4-Pin(3+Tab) SOT-89 T/R
500mV@ 50mA,500mA PNP 2W 5V 100nA 100V 80V 1A SOT-89-3 4.5mm*2.5mm*1.5mm
メーカーの別名
Diodes Inc.は世界中でいくつかのブランドを持っており、販売業者が代替名として使用するかもしれません。 Diodes Inc. は以下の名前でも知られているかもしれません：
- Diodes Incorporated
- DIODE
- DII
- DIO
- DIODE INC
- DC COMPONENTS
- DIOD
- YENYO
- Diodes Zetex
- MICRO COM
- MICRO ELECTRONIC INS
- Diodes Inc / Zetex
- DIODE INCORPORATED
- DIODES ZET
- DIODSE
- DINC
- Diodes Inc Inc
- DIOINC
- FORMOSA MS
- DIODES INC(RoHS)
- ZETEX (DIODES INC)
- DIODES INC/VISHAY
- Diodes Incorporation
- ZETEXDIODES
- DIODES INC/VISH
- Pericom
- Diodes Incorporated
技術仕様
Physical
Case/PackageSOT-89
Contact PlatingTin
MountSurface Mount
Number of Pins4
Number of Terminals3
Weight51.993025 mg
Technical
Collector Base Voltage (VCBO)100 V
Collector Emitter Breakdown Voltage80 V
Collector Emitter Saturation Voltage500 mV
Collector Emitter Voltage (VCEO)80 V
Element ConfigurationSingle
Emitter Base Voltage (VEBO)5 V
Frequency150 MHz
Gain Bandwidth Product150 MHz
hFE Min63
Max Breakdown Voltage80 V
Max Collector Current1 A
Max Frequency150 MHz
Max Operating Temperature150 °C
Max Power Dissipation2 W
Min Operating Temperature-55 °C
Number of Elements1
PackagingTape & Reel
PolarityPNP
Power Dissipation1 W
Schedule B8541290080
Transition Frequency150 MHz
Dimensions
Height1.5 mm
Length4.5 mm
Width2.5 mm