説明
Analog Devices MAT04FSZの詳細は販売業者から提供されます。
Small Signal Bipolar Transistor, 0.03A I(C), 40V V(BR)CEO, 4-Element, NPN, Silicon
Trans GP BJT NPN 40V 0.03A 14-Pin SOIC N
Bipolar Transistor; Transistor Polarity:N Channel; Collector Emitter Voltage, V(br)ceo:40V; Continuous Collector Current, Ic:30mA; Collector Emitter Saturation Voltage, Vce(sat):0.06V; Power Dissipation, Pd:350mW ;RoHS Compliant: Yes
TRANSISTOR; Transistor Type:Bipolar; Transistor Polarity:NPN; Collector-to-Emitter Breakdown Voltage:40V; Current Ic Continuous a Max:30mA; Voltage, Vce Sat Max:0.06V; Power Dissipation:350mW; Min Hfe:200; ft, Typ:300MHz; Case Style:SOIC; Termination Type:SMD; Operating Temperature Range:-40°C to +85°C
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- Analog Devices / Maxim Integrated
技術仕様
Physical
Case/PackageSOIC N
MountSurface Mount
Number of Pins14
Technical
Collector Base Voltage (VCBO)40 V
Collector Emitter Breakdown Voltage40 V
Collector Emitter Voltage (VCEO)40 V
Current Rating30 mA
Frequency300 MHz
Max Operating Temperature85 °C
Min Operating Temperature-40 °C
Number of Elements4
PackagingBulk
PolarityNPN
Power Dissipation350 mW
Voltage Rating (DC)40 V