Win Source ディスクリート半導体

Transistor: N-MOSFET; unipolar; 100V; 0.17A; 6ohm; 225mW; -55+150 deg.C; SMD; SOT23; AEC-Q100

SWITCHING DIODE Rectifier Diode, 1 Phase, 1 Element, 0.2A, 100V V(RRM), Silicon

Diode, Zener, Vr 15V, If 200MA, Pkg Smb, Vf 1.5V, Tj +150DEGC, Pd 3W, Ir 25MA

BSP Series 80 V 1 A NPN Small Signal Darlington Transistor - SOT-223

500 mA, 40 V, Schottky Barrier Diode DSN2 0402 Schottky Diode 40V 0.5 A

Single N−Channel Power MOSFET 60V, 150A, 2.4mΩ Power MOSFET 60V 140A 2.9 mΩ Single N−Channel SO-8FL Logic Level

Bipolar Transistors (BJT); MBT3904DW1T1G; ON SEMICONDUCTOR; NPN; 6; 40 V; 200 mA

Transistor MOSFET P-Channel 60V 2.5A 3W (Ta) Surface Mount SOT-223-4

Dual P-Channel 30 V 1.6 W 40 nC Silicon Surface Mount Mosfet - SOIC-8

Diode, Zener, Vr 18V, If 10MA, Pkg SOT-23 (TO-236), Vf 0.9V, Cj 100PF, Tj +150C, Ir 5MA