IXYS IXTN36N50

Mosfet Transistor, N Channel, 36 A, 500 V, 120 Mohm, 10 V, 5 V Rohs Compliant: Yes

Price and Stock

Distributor	SKU		MOQ
Component Stockers USA	IXTN36N50	16,446		14.520	14.230	13.790	13.360	13.360	3d
Win Source	608582-IXTN36N50	1,650	1	192.33	192.33	192.33	192.33	192.33	4d
Fly-Wing Technology	IXTN36N50	11,697		106.72	95.712	85.729	75.125	75.125	2d
Hyper Source Electronics	IXTN36N50	2,280		102.37	102.37	102.37	102.37	102.37	1d
Suntronic	IXTN36N50	892	10		23.094	23.094	23.094	23.094	23h

Technical Specifications

Physical

Case/PackageSOT-227-4

MountChassis Mount

Number of Pins3

Technical

Continuous Drain Current (ID)36 A

Drain to Source Resistance120 MΩ

Drain to Source Voltage (Vdss)500 V

Dual Supply Voltage500 V

Max Operating Temperature150 °C

Max Power Dissipation400 W

Min Operating Temperature-40 °C

Nominal Vgs5 V

Power Dissipation400 W

Resistance120 mΩ

Threshold Voltage5 V

Inventory History

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Alternate Parts

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Documents

Download datasheets and manufacturer documentation for IXYS IXTN36N50.

element14 APAC

Datasheet4 pages23 years ago

Future Electronics

Datasheet4 pages18 years ago

B+D Enterprises

Datasheet4 pages0 years ago

iiiC

Datasheet4 pages0 years ago

Engineering Resources

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Descriptions

Descriptions of IXYS IXTN36N50 provided by its distributors.

Mosfet Transistor, N Channel, 36 A, 500 V, 120 Mohm, 10 V, 5 V Rohs Compliant: Yes

Newark

MOSFET, N, SOT-227B; Transistor Polarity:N Channel; Continuous Drain Current Id:36A; Source Voltage Vds:500V; On Resistance Rds(on):0.12ohm;

element14 APAC

MOSFET, N, SOT-227B; Transistor Polarity: N Channel; Continuous Drain Current Id: 36A; Drain Source Voltage Vds: 500V; On Resistance Rds(on): 0.12ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 5V; Power Dissipation Pd: 400W; Transistor Case Style: ISOTOP; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (12-Jan-2017); Current Id Max: 36A; Current Temperature: 25°C; Full Power Rating Temperature: 25°C; No. of Transistors: 1; On State Resistance Max: 120mohm; Operating Temperature Min: -40°C; Operating Temperature Range: -40°C to +150°C; Pulse Current Idm: 133A; Voltage Vds Typ: 500V; Voltage Vgs Max: 20V; Voltage Vgs Rds on Measurement: 10V; Voltage Vgs th Max: 5V

Farnell