IXYS IXTH80N65X2
Technical Specifications
Physical
Case/PackageTO-247-3
MountThrough Hole
Technical
Continuous Drain Current (ID)80 A
Drain to Source Breakdown Voltage650 V
Drain to Source Resistance38 mΩ
Drain to Source Voltage (Vdss)650 V
Gate to Source Voltage (Vgs)30 V
Input Capacitance7.753 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation890 W
Manufacturer Package IdentifierIXTH80N65X2
Min Operating Temperature-55 °C
Number of Channels1
Power Dissipation890 W
Rds On Max40 mΩ
Turn-Off Delay Time72 ns
Turn-On Delay Time36 ns
Dimensions
Height25.66 mm
Inventory History
3 month trend: -49.48%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Engineering Resources
View Evaluation kits and Reference designs for IXYS IXTH80N65X2.
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Descriptions
Descriptions of IXYS IXTH80N65X2 provided by its distributors.
Trans MOSFET N-CH 650V 80A 3-Pin(3+Tab) TO-247
MOSFET, Single - N-Channel, 650V, 80A, 890W, TO-247
Mosfet, N-Ch, 650V, 80A, To-247; Transistor Polarity:n Channel; Drain Source Voltage Vds:650V; Continuous Drain Current Id:80A; On Resistance Rds(On):0.038Ohm; Transistor Mounting:through Hole; Rds(On) Test Voltage Vgs:10V Rohs Compliant: Yes
Manufacturer Aliases
IXYS has several brands around the world that distributors may use as alternate names. IXYS may also be known as the following names:
- IXYS Integrated Circuits Division
- IXYS Corporation
- IXYS CORP
- IXY
- IXYS-RF
- IXYS SEMICONDUCTOR
- IXYS Integrated Circuits/Clare
- IXYS GMBH
- IXYS Integrated Circuits
- IXYS Integrated Circuits Division Inc
- IXYS-DIRECTED ENERGY
- IXYS SEMICONDUCTOR GMBH
- IXYS / Littelfuse
- IXYS INTEGRATED CIRCUITS DIV
- Littelfuse - Ixys
- IXYS Integrated Circuits Division / Littelfuse
- Ixys / WESTCODE
- IXYS (VA)
- IXYS CORPO
- IXYS Semiconducter GmbH
- IXYS Integrated
- IXYS SEMICONDUCTOR CORP
- IXYS CLARE
- Clare/IXYS Corporation
- IXYS INTEGCIRCUITS DIV(CLARE)
Inventory History
3 month trend: -49.48%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageTO-247-3
MountThrough Hole
Technical
Continuous Drain Current (ID)80 A
Drain to Source Breakdown Voltage650 V
Drain to Source Resistance38 mΩ
Drain to Source Voltage (Vdss)650 V
Gate to Source Voltage (Vgs)30 V
Input Capacitance7.753 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation890 W
Manufacturer Package IdentifierIXTH80N65X2
Min Operating Temperature-55 °C
Number of Channels1
Power Dissipation890 W
Rds On Max40 mΩ
Turn-Off Delay Time72 ns
Turn-On Delay Time36 ns
Dimensions
Height25.66 mm