IXYS IXFN80N50P

Single N-Channel 500 Vds 55 mOhm 780 W Power Mosfet - SOT-227B
Datasheet

Price and Stock

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Non-Authorized Stocking Distributors
Non-Authorized Dealers

Technical Specifications

Physical
Case/PackageSOT-227-4
MountChassis Mount, Panel
Number of Pins4
Technical
Continuous Drain Current (ID)66 A
Current Rating80 A
Drain to Source Breakdown Voltage500 V
Drain to Source Resistance65 mΩ
Drain to Source Voltage (Vdss)500 V
Element ConfigurationSingle
Fall Time18 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance12.7 nF
Max Operating Temperature150 °C
Max Power Dissipation700 W
Min Operating Temperature-55 °C
PackagingBulk
Power Dissipation700 W
Rds On Max65 mΩ
Resistance55 MΩ
Rise Time27 ns
Turn-Off Delay Time70 ns
Turn-On Delay Time25 ns
Voltage Rating (DC)500 V
Dimensions
Height9.6 mm
Length38.2 mm
Width25.07 mm

Documents

Download datasheets and manufacturer documentation for IXYS IXFN80N50P.

Factory Futures
Datasheet5 pages17 years ago
TME
Datasheet5 pages17 years ago
WattBits
Datasheet4 pages15 years ago
iiiC
Datasheet5 pages17 years ago

Inventory History

3 month trend:
-55.04%

Engineering Resources

View Evaluation kits and Reference designs for IXYS IXFN80N50P.

Related Parts

Descriptions

Descriptions of IXYS IXFN80N50P provided by its distributors.

Single N-Channel 500 Vds 55 mOhm 780 W Power Mosfet - SOT-227B
Trans MOSFET N-CH 500V 66A 4-Pin SOT-227B
N-Ch 500V 66A 700W 0,065R SOT227B
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 66 / Drain-Source Voltage (Vds) V = 500 / ON Resistance (Rds(on)) mOhm = 65 / Gate-Source Threshold Voltage V = 5 / Gate-Source Voltage V = 30 / Power Dissipation (Pd) W = 700 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Fall Time ns = 18 / Rise Time ns = 27 / Turn-OFF Delay Time ns = 70 / Turn-ON Delay Time ns = 25 / Package Type = SOT-227B / Mounting Type = SMD / Packaging = Tube

Manufacturer Aliases

IXYS has several brands around the world that distributors may use as alternate names. IXYS may also be known as the following names:

  • IXYS Integrated Circuits Division
  • IXYS Corporation
  • IXYS CORP
  • IXY
  • IXYS-RF
  • IXYS SEMICONDUCTOR
  • IXYS Integrated Circuits/Clare
  • IXYS GMBH
  • IXYS Integrated Circuits
  • IXYS Integrated Circuits Division Inc
  • IXYS-DIRECTED ENERGY
  • IXYS SEMICONDUCTOR GMBH
  • IXYS / Littelfuse
  • IXYS INTEGRATED CIRCUITS DIV
  • Littelfuse - Ixys
  • IXYS Integrated Circuits Division / Littelfuse
  • Ixys / WESTCODE
  • IXYS (VA)
  • IXYS CORPO
  • IXYS Semiconducter GmbH
  • IXYS Integrated
  • IXYS SEMICONDUCTOR CORP
  • IXYS CLARE
  • Clare/IXYS Corporation
  • IXYS INTEGCIRCUITS DIV(CLARE)

Technical Specifications

Physical
Case/PackageSOT-227-4
MountChassis Mount, Panel
Number of Pins4
Technical
Continuous Drain Current (ID)66 A
Current Rating80 A
Drain to Source Breakdown Voltage500 V
Drain to Source Resistance65 mΩ
Drain to Source Voltage (Vdss)500 V
Element ConfigurationSingle
Fall Time18 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance12.7 nF
Max Operating Temperature150 °C
Max Power Dissipation700 W
Min Operating Temperature-55 °C
PackagingBulk
Power Dissipation700 W
Rds On Max65 mΩ
Resistance55 MΩ
Rise Time27 ns
Turn-Off Delay Time70 ns
Turn-On Delay Time25 ns
Voltage Rating (DC)500 V
Dimensions
Height9.6 mm
Length38.2 mm
Width25.07 mm

Documents

Download datasheets and manufacturer documentation for IXYS IXFN80N50P.

Factory Futures
Datasheet5 pages17 years ago
TME
Datasheet5 pages17 years ago
WattBits
Datasheet4 pages15 years ago
iiiC
Datasheet5 pages17 years ago

Compliance

Environmental Classification
Lead FreeLead Free
RoHSCompliant