IXYS IXFN360N10T

Single N-Channel 100 Vds 2.6 mOhm 830 W Power Mosfet - SOT-227B
Datasheet

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Technical Specifications

Physical
Case/PackageSOT-227-4
MountChassis Mount, Screw
Number of Pins4
Technical
Continuous Drain Current (ID)360 A
Drain to Source Resistance2.6 mΩ
Drain to Source Voltage (Vdss)100 V
Element ConfigurationSingle
Fall Time160 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance36 nF
Max Operating Temperature175 °C
Max Power Dissipation830 W
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation830 W
Rds On Max2.6 mΩ
Resistance2.6 MΩ
Rise Time100 ns
Turn-Off Delay Time80 ns

Documents

Download datasheets and manufacturer documentation for IXYS IXFN360N10T.

element14 APAC
Datasheet6 pages14 years ago
Factory Futures
Datasheet5 pages15 years ago
TME
Datasheet6 pages14 years ago
Future Electronics
Datasheet7 pages14 years ago

Inventory History

3 month trend:
Restocked

Engineering Resources

View Evaluation kits and Reference designs for IXYS IXFN360N10T.

Related Parts

Descriptions

Descriptions of IXYS IXFN360N10T provided by its distributors.

Single N-Channel 100 Vds 2.6 mOhm 830 W Power Mosfet - SOT-227B
Mosfet Module, N-Ch, 100V, 360A; Transistor Polarity:N Channel; Continuous Drain Current Id:360A; Drain Source Voltage Vds:100V; On Resistance Rds(On):0.0026Ohm; Rds(On) Test Voltage Vgs:100V; Threshold Voltage Vgs:4.5V; Power Rohs Compliant: Yes |Ixys Semiconductor IXFN360N10T
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 360 / Drain-Source Voltage (Vds) V = 100 / ON Resistance (Rds(on)) mOhm = 2.6 / Gate-Source Threshold Voltage V = 4.5 / Gate-Source Voltage V = 20 / Power Dissipation (Pd) W = 830 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Fall Time ns = 26 / Rise Time ns = 142 / Turn-OFF Delay Time ns = 63 / Turn-ON Delay Time ns = 52 / Package Type = SOT-227B / Mounting Type = SMD / Packaging = Tube

Manufacturer Aliases

IXYS has several brands around the world that distributors may use as alternate names. IXYS may also be known as the following names:

  • IXYS Integrated Circuits Division
  • IXYS Corporation
  • IXYS CORP
  • IXY
  • IXYS-RF
  • IXYS SEMICONDUCTOR
  • IXYS Integrated Circuits/Clare
  • IXYS GMBH
  • IXYS Integrated Circuits
  • IXYS Integrated Circuits Division Inc
  • IXYS-DIRECTED ENERGY
  • IXYS SEMICONDUCTOR GMBH
  • IXYS / Littelfuse
  • IXYS INTEGRATED CIRCUITS DIV
  • Littelfuse - Ixys
  • IXYS Integrated Circuits Division / Littelfuse
  • Ixys / WESTCODE
  • IXYS (VA)
  • IXYS CORPO
  • IXYS Semiconducter GmbH
  • IXYS Integrated
  • IXYS SEMICONDUCTOR CORP
  • IXYS CLARE
  • Clare/IXYS Corporation
  • IXYS INTEGCIRCUITS DIV(CLARE)

Part Number Aliases

This part may be known by these alternate part numbers:

  • IXFN 360N10T

Technical Specifications

Physical
Case/PackageSOT-227-4
MountChassis Mount, Screw
Number of Pins4
Technical
Continuous Drain Current (ID)360 A
Drain to Source Resistance2.6 mΩ
Drain to Source Voltage (Vdss)100 V
Element ConfigurationSingle
Fall Time160 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance36 nF
Max Operating Temperature175 °C
Max Power Dissipation830 W
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation830 W
Rds On Max2.6 mΩ
Resistance2.6 MΩ
Rise Time100 ns
Turn-Off Delay Time80 ns

Documents

Download datasheets and manufacturer documentation for IXYS IXFN360N10T.

element14 APAC
Datasheet6 pages14 years ago
Factory Futures
Datasheet5 pages15 years ago
TME
Datasheet6 pages14 years ago
Future Electronics
Datasheet7 pages14 years ago

Compliance

Environmental Classification
Lead FreeLead Free
Radiation HardeningNo
RoHSCompliant