IXYS IXFH26N60Q

Transistor: N-MOSFET; unipolar; 600V; 26A; 360W; TO247AD

Datasheet

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Descriptions

MOSFET, N, TO-247; Transistor Polarity:N Channel; Continuous Drain Current Id:26A; Drain Source Voltage Vds:600V; On Resistance Rds(on):250mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4.5V; Power Dissipation Pd:360W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-247; No. of Pins:3; Avalanche Single Pulse Energy Eas:1.5J; Current Id Max:26A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-55°C; N-channel Gate Charge:150nC; No. of Transistors:1; On State Resistance Max:250mohm; Package / Case:TO-247; Power Dissipation Pd:360W; Power Dissipation Pd:360W; Pulse Current Idm:104A; Rate of Voltage Change dv / dt:5V/ns; Repetitive Avalanche Energy Max:45mJ; Reverse Recovery Time trr Typ:250ns; Termination Type:Through Hole; Voltage Vds Typ:600V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4.5V; Weight:6g
element14 APAC
MOSFET, N, TO-247; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:600V; Current, Id Cont:26A; Resistance, Rds On:0.25ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:4.5V; Case Style:TO-247; Termination Type:Through Hole; Avalanche Single Pulse Energy Eas:1.5J; Current, Idm Pulse:104A; Max Repetitive Avalanche Energy:45mJ; N-channel Gate Charge:150nC; No. of Pins:3; Power Dissipation:360W; Power, Pd:360W; Resistance, Rds on Max:0.25ohm; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Temperature, Tj Max:150°C; Temperature, Tj Min:-55°C; Time, trr Typ:250ns; Transistors, No. of:1; Voltage, Vds Max:600V; Voltage, Vgs th Max:4.5V; Weight:6g; dv/dt:5V/ns
Farnell
MOSFET N-CH 600V 26A TO-247AD
Digi-Key
Trans MOSFET N-CH 600V 26A 3-Pin(3+Tab) TO-247AD
Chip One Stop Japan
Transistor: N-MOSFET; unipolar; 600V; 26A; 360W; TO247AD
TME
N-Ch 600V 26A 360W 0,25R TO247AD
Schukat
MOSFET N-CH 600V 26A TO-247AD - IXFH26N60Q
iiiC
MOSFET, N, TO-247; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:600V; Current, Id Cont:26A; Resistance, Rds On:0.25ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:4.5V; Case Style:TO-247; Termination ;RoHS Compliant: Yes
Newark
Trans MOSFET N-CH Si 600V 26A 3-Pin(3+Tab) TO-247AD
Verical

Technical Specifications

Current Rating 26 A
Rise Time 32 ns
Packaging Bulk
Drain to Source Resistance (on) (Rds) 250 mΩ
Polarity N-Channel
Number of Pins 3
Drain to Source Voltage (Vds) 600 V
Weight 6 g
Mounting Type Through Hole
Continuous Drain Current (Ids) 26 A
Voltage Rating (DC) 600 V
Lead-Free Status Lead Free
REACH SVHC Compliance No SVHC
Power Dissipation 360 W
RoHS Compliant

Documents

Digi-Key
Datasheet 2 pages 14 years ago
iiiC
Datasheet 2 pages 14 years ago
Onlinecomponents.com
Datasheet 4 pages 13 years ago

Images

Alternate Names

IXYS CORPORATION IXFH26N60Q
IXY IXFH26N60Q
IXYS CORP IXFH26N60Q
IXYS SEMICONDUCTOR IXFH26N60Q
IXYS Integrated Circuits Division IXFH26N60Q
IXYS GMBH IXFH26N60Q
IXYS Integrated Circuits/Clare IXFH26N60Q
IXYS-DIRECTED ENERGY IXFH26N60Q
IXYS SEMICONDUCTOR GMBH IXFH26N60Q
IXYS (VA) IXFH26N60Q
IXYS CORPO IXFH26N60Q
IXYS Semiconducter GmbH IXFH26N60Q
IXYS CORPORATION|V IXFH26N60Q
IXYSCOR IXFH26N60Q
IXYS SEMICONDUCTOR CORP IXFH26N60Q
IXYS Integrated Circuits Division Inc IXFH26N60Q
CP CLAIRE IXFH26N60Q
IXYS Colorado (IXYS RF Division) IXFH26N60Q
Clare (IXYS) IXFH26N60Q
IXYS SEMICOND IXFH26N60Q

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