IXYS IXFH20N60

Trans MOSFET N-CH Si 600V 20A 3-Pin(3+Tab) TO-247AD

Datasheet

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Descriptions

MOSFET, N, TO-247; Transistor Polarity:N Channel; Continuous Drain Current Id:20A; Drain Source Voltage Vds:600V; On Resistance Rds(on):350mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4.5V; Power Dissipation Pd:300W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-247; No. of Pins:3; Current Id Max:20A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-55°C; N-channel Gate Charge:151nC; No. of Transistors:1; On State Resistance Max:350mohm; Package / Case:TO-247; Power Dissipation Pd:300W; Power Dissipation Pd:300W; Pulse Current Idm:60A; Rate of Voltage Change dv / dt:5V/ns; Repetitive Avalanche Energy Max:30mJ; Reverse Recovery Time trr Typ:250ns; Termination Type:Through Hole; Voltage Vds Typ:600V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4.5V; Weight:6g
element14 APAC
Trans MOSFET N-CH 600V 20A 3-Pin(3+Tab) TO-247AD
Chip One Stop Japan
MOSFET N-CH 600V 20A TO-247AD - IXFH20N60
iiiC
MOSFET, N, TO-247; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:600V; Current, Id Cont:20A; Resistance, Rds On:0.35ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:4.5V; Case Style:TO-247; Termination Type:Through Hole; Current, Idm Pulse:60A; Max Repetitive Avalanche Energy:30mJ; N-channel Gate Charge:151nC; No. of Pins:3; Power Dissipation:300W; Power, Pd:300W; Resistance, Rds on Max:0.35ohm; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Temperature, Tj Max:150°C; Temperature, Tj Min:-55°C; Time, trr Typ:250ns; Transistors, No. of:1; Voltage, Vds Max:600V; Voltage, Vgs th Max:4.5V; Weight:6g; dv/dt:5V/ns
Farnell
Trans MOSFET N-CH Si 600V 20A 3-Pin(3+Tab) TO-247AD
Verical

Technical Specifications

Drain to Source Resistance (on) (Rds) 350 mΩ
RoHS Compliant
Power Dissipation 300 W
Polarity N-Channel
Continuous Drain Current (Ids) 20 A
Gate Charge 90 nC
Drain to Source Voltage (Vds) 600 V
Weight 6 g
Packaging Bulk
Lead-Free Status Lead Free
Voltage Rating (DC) 600 V
Breakdown Voltage (Drain to Source) 300 V
Input Capacitance 3.3 nF
Current Rating 20 A
Number of Pins 3
Rise Time 20 ns
Mounting Type Through Hole

Documents

Digi-Key
Datasheet 4 pages 16 years ago
iiiC
Datasheet 4 pages 16 years ago
Onlinecomponents.com
Datasheet 4 pages 16 years ago

Images

Alternate Names

IXYS CORPORATION IXFH20N60
IXY IXFH20N60
IXYS CORP IXFH20N60
IXYS SEMICONDUCTOR IXFH20N60
IXYS Integrated Circuits Division IXFH20N60
IXYS GMBH IXFH20N60
IXYS Integrated Circuits/Clare IXFH20N60
IXYS-DIRECTED ENERGY IXFH20N60
IXYS SEMICONDUCTOR GMBH IXFH20N60
IXYS (VA) IXFH20N60
IXYS CORPO IXFH20N60
IXYS Semiconducter GmbH IXFH20N60
IXYS CORPORATION|V IXFH20N60
IXYSCOR IXFH20N60
IXYS SEMICONDUCTOR CORP IXFH20N60
IXYS Integrated Circuits Division Inc IXFH20N60
CP CLAIRE IXFH20N60
IXYS Colorado (IXYS RF Division) IXFH20N60
Clare (IXYS) IXFH20N60
IXYS SEMICOND IXFH20N60

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