Vishay TN0200K-T1-E3
Obsolete
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Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2004-02-12
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2015-06-17
LTD Date2015-12-16
Parti correlate
VishaySI2312CDS-T1-GE3
Transistor: N-MOSFET; unipolar; 20V; 6A; 0.0318ohm; 2.1W; -55+150 deg.C; SMD; SOT23
Diodes Inc.DMN2075U-7
Single N-Channel 20 V 45 mOhm 7 nC 0.8 W Silicon Surface Mount Mosfet - SOT-23
VishaySI2301CDS-T1-E3
Trans MOSFET P-CH 20V 3.1A 3-Pin SOT-23 T/R / MOSFET P-CH 20V 3.1A SOT23-3
Descrizioni
Descrizioni di Vishay TN0200K-T1-E3 fornite dai suoi distributori.
Trans MOSFET N-CH 20V 0.73A 3-Pin TO-236 T/R
Power Field-Effect Transistor, 0.73A I(D), 20V, 0.5ohm, 1-Element, N-Channel, Silicon, Trench Mosfet FET, TO-236
MOSFET; Transistor Polarity:N Channel; Continuous Drain Current, Id:730mA; Drain Source Voltage, Vds:20V; Power Dissipation, Pd:350mW; Drain Source On Resistance @ 4.5V:0.2ohm; Drain-Source Breakdown Voltage:20V ;RoHS Compliant: Yes
MOSFET, N SOT-23; Transistor Polarity:N Channel; Continuous Drain Current Id:730mA; Drain Source Voltage Vds:20V; On Resistance Rds(on):400mohm; Rds(on) Test Voltage Vgs:4.5V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOT-23; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:730mA; Current Temperature:25°C; External Depth:2.5mm; External Length / Height:1.12mm; External Width:3.05mm; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:SOT-23 (TO-236); Power Dissipation Pd:35W; Power Dissipation Pd:350mW; Power Dissipation Ptot Max:350mW; Pulse Current Idm:4A; SMD Marking:K2ywl; Tape Width:8mm; Termination Type:SMD; Voltage Vgs Max:0.6V; Voltage Vgs th Max:1V
Alias del produttore
Vishay ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. Vishay può anche essere conosciuto con i seguenti nomi:
- VIS
- VISH
- VISHAY INTERTECHNOLOGY INC
- Vishay Thin Film
- Vishay Intertechnology
- VISHA
- Vishay Semiconductors
- VISAHY
- Vishay Intertech
- VISHY
- VISHAY INTERTECHNOLOGY ASIA PTE LTD
- Vishay Intertechnologies
- Vishay General Semiconductor - Diodes Division
- Vishay Semiconductor Opto Division
- VSHAY
- VISH/IR
- VSHY
- VSH
- VISHAY INTERTECHNOLOGY ASIA PT
- VISHAY ELECTRONIC
- VISHAY AMERICAS INC
- Vishay Semiconductor Diodes Division
- VISHAY OPTO
- Vishay Techno
- VISHAY FOIL RESISTORS
- Vishay Semiconductor
- Vishay Sfernice
- Vishay Siliconix
- Vishay Dale
- Vishay BCcomponents
- Vishay Angstrohm
- Vishay Draloric
Specifiche tecniche
Physical
Case/PackageSOT-23-3
Contact PlatingTin
MountSurface Mount
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)730 mA
Current12 A
Drain to Source Breakdown Voltage20 V
Drain to Source Resistance500 mΩ
Drain to Source Voltage (Vdss)20 V
Element ConfigurationSingle
Fall Time20 ns
Gate to Source Voltage (Vgs)8 V
Max Operating Temperature150 °C
Max Power Dissipation350 mW
Min Breakdown Voltage20 V
Min Operating Temperature-55 °C
Nominal Vgs600 mV
Number of Elements1
Power Dissipation350 mW
Rds On Max400 mΩ
Resistance400 mΩ
Rise Time20 ns
TerminationSMD/SMT
Threshold Voltage600 mV
Turn-Off Delay Time55 ns
Turn-On Delay Time17 ns
Voltage20 V
Dimensions
Height1.016 mm
Length3.0226 mm
Width3.05 mm
Conformità
Classificazione ambientale
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Dichiarazioni di conformità