Vishay SUD30N03-30

N-Channel 30-V (D-S), 175 DegreeCelcious MOSFET
Obsolete
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Schede tecniche e documenti

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element14 APAC

Datasheet5 pagine16 anni fa

Newark

IHS

Supply Chain

Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1998-02-24
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2007-12-15
LTD Date2008-06-12

Descrizioni

Descrizioni di Vishay SUD30N03-30 fornite dai suoi distributori.

N-Channel 30-V (D-S), 175 DegreeCelcious MOSFET
Power Field-Effect Transistor, 30A I(D), 30V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:30A; On-Resistance, Rds(on):0.045ohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-252; Leaded Process Compatible:No RoHS Compliant: No
MOSFET, N, D-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:30A; Drain Source Voltage Vds:30V; On Resistance Rds(on):30mohm; Threshold Voltage Vgs Typ:1V; Power Dissipation Pd:50W; Transistor Case Style:D-PAK; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:D-PAK; Package / Case:DPAK; Power Dissipation Pd:50W; Power Dissipation Pd:50W; Pulse Current Idm:40A; Termination Type:SMD; Voltage Vds Typ:30V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Min:1V

Alias del produttore

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