Vishay SIS402DN-T1-GE3
$ 0.934
NRND
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Cronologia dell'inventario
Tendenza a 3 mesi: +41.74%
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0 models available
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Descrizioni
Descrizioni di Vishay SIS402DN-T1-GE3 fornite dai suoi distributori.
Single N-Channel 30 V 0.006 Ohms Surface Mount Power Mosfet - PowerPAK-1212-8
Trans MOSFET N-CH 30V 35A 8-Pin PowerPAK 1212 EP T/R
Power Field-Effect Transistor, 35A I(D), 30V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
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MOSFET N-CH 30V 35A PPAK1212-8
N-channel MOSFET, 40V, 2.3A, Vishay
MOSFET,N CH,30V,35A,POWERPAK8; Transistor Polarity:N Channel; Continuous Drain Current Id:35A; Drain Source Voltage Vds:30V; On Resistance Rds(on):4.8mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:3.8W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PowerPAK 1212; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:19A; Power Dissipation Pd:3.8W; Voltage Vgs Max:20V
Alias del produttore
Vishay ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. Vishay può anche essere conosciuto con i seguenti nomi:
- VIS
- VISH
- VISHAY INTERTECHNOLOGY INC
- Vishay Thin Film
- Vishay Intertechnology
- VISHA
- Vishay Semiconductors
- VISAHY
- Vishay Intertech
- VISHY
- VISHAY INTERTECHNOLOGY ASIA PTE LTD
- Vishay Intertechnologies
- Vishay General Semiconductor - Diodes Division
- Vishay Semiconductor Opto Division
- VSHAY
- VISH/IR
- VSHY
- VSH
- VISHAY INTERTECHNOLOGY ASIA PT
- VISHAY ELECTRONIC
- VISHAY AMERICAS INC
- Vishay Semiconductor Diodes Division
- VISHAY OPTO
- Vishay Techno
- VISHAY FOIL RESISTORS
- Vishay Semiconductor
- Vishay Sfernice
- Vishay Siliconix
- Vishay Dale
- Vishay BCcomponents
- Vishay Angstrohm
- Vishay Draloric
Cronologia dell'inventario
Tendenza a 3 mesi: +41.74%
Modelli CAD
0 models available
Parti alternative
0 parti disponibili
Specifiche tecniche
Physical
MountSurface Mount
Number of Pins8
Number of Terminals5
Technical
Continuous Drain Current (ID)35 A
Drain to Source Resistance6 mΩ
Drain to Source Voltage (Vdss)30 V
Fall Time15 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.7 nF
Max Operating Temperature150 °C
Max Power Dissipation5.2 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation3.8 W
Rds On Max6 mΩ
Resistance6 mΩ
Rise Time20 ns
Schedule B8541290080
Threshold Voltage3 V
Turn-Off Delay Time25 ns
Turn-On Delay Time25 ns
Dimensions
Height1.04 mm
Length3.05 mm
Width3.05 mm
Conformità
Classificazione ambientale
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Dichiarazioni di conformità