Vishay SIHW33N60E-GE3
$ 3.382
Production
Prezzo e stock
Distributori autorizzati
Distributori di stock non autorizzati
Rivenditori non autorizzati
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| TTI | SIHW33N60E-GE3 | 0 | 480 | Tube | 24m | |||||||
| Avnet | SIHW33N60E-GE3 | 0 | 480 | 3d | ||||||||
| TTI Asia | SIHW33N60E-GE3 | Contatto | 14h | |||||||||
| TTI Europe | SIHW33N60E-GE3 | 0 | 480 | Tube | 1h | |||||||
| Farnell | SIHW33N60E-GE3 | 0 | 1 | 21h |
Cronologia dell'inventario
Tendenza a 3 mesi: -4.81%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
0 parti disponibili
Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2012-09-19
Lifecycle StatusProduction (Last Updated: 4 months ago)
Parti correlate
VishaySIHW30N60E-GE3
MOSFET, N CH, 600V, 29A, TO-247AD-3; Transistor Polarity:N Channel; Continuous D
VishaySIHG30N60E-GE3
MOSFET, N CH, 600V, 29A, TO-247AC-3; Transistor Polarity:N Channel; Continuous D
onsemiFCH099N60E
N-Channel Power MOSFET, SUPERFET® II, Easy Drive, 600 V, 37 A, 99 mΩ, TO-247
STMicroelectronicsSTW45N60DM2AG
MOSFET N-CH 600V 34A TO247 / N-Channel 600 V 34A (Tc) 250W (Tc) Through Hole TO-247-3
STMicroelectronicsSTW48N60M2
N-channel 600 V, 0.06 Ohm typ., 42 A MDmesh M2 Power MOSFET in TO-247 package
Descrizioni
Descrizioni di Vishay SIHW33N60E-GE3 fornite dai suoi distributori.
MOSFET, N CH, 600V, 33A, TO-247AD-3; Transistor Polarity:N Channel; Continuous D
MOSFET N-CH 600V 33A TO247AD / N-Channel 600 V 33A (Tc) 278W (Tc) Through Hole TO-247AD
278W(Tc) 30V 4V@ 250¦ÌA 150nC@ 10 V 1N 600V 99m¦¸@ 16.5A,10V 33A 3.508nF@100V TO-247AD 21.46mm
Trans MOSFET N-CH 600V 33A 3-Pin(3+Tab) TO-247AD
MOSFET 600V 99mOhm@10V 33A N-Ch E-SRS
Power Field-Effect Transistor, 33A I(D), 600V, 0.099ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD
Alias del produttore
Vishay ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. Vishay può anche essere conosciuto con i seguenti nomi:
- VIS
- VISH
- VISHAY INTERTECHNOLOGY INC
- Vishay Thin Film
- Vishay Intertechnology
- VISHA
- Vishay Semiconductors
- VISAHY
- Vishay Intertech
- VISHY
- VISHAY INTERTECHNOLOGY ASIA PTE LTD
- Vishay Intertechnologies
- Vishay General Semiconductor - Diodes Division
- Vishay Semiconductor Opto Division
- VSHAY
- VISH/IR
- VSHY
- VSH
- VISHAY INTERTECHNOLOGY ASIA PT
- VISHAY ELECTRONIC
- VISHAY AMERICAS INC
- Vishay Semiconductor Diodes Division
- VISHAY OPTO
- VISHAY FOIL RESISTORS
- Vishay Polytech
- Vishay Semiconductor
- Vishay Sfernice
- Vishay Siliconix
- Vishay Dale
- Vishay BCcomponents
- Vishay Angstrohm
- Vishay Draloric
Cronologia dell'inventario
Tendenza a 3 mesi: -4.81%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
0 parti disponibili
Specifiche tecniche
Physical
Case/PackageTO-247-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight38.000013 g
Technical
Continuous Drain Current (ID)33 A
Drain to Source Breakdown Voltage600 V
Drain to Source Resistance99 mΩ
Drain to Source Voltage (Vdss)600 V
Element ConfigurationSingle
Fall Time80 ns
Gate to Source Voltage (Vgs)4 V
Input Capacitance3.508 nF
Max Operating Temperature150 °C
Max Power Dissipation278 W
Min Breakdown Voltage600 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Rds On Max99 mΩ
Rise Time90 ns
Threshold Voltage2 V
Turn-Off Delay Time150 ns
Turn-On Delay Time56 ns
Conformità
Classificazione ambientale
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Dichiarazioni di conformità