Vishay SIHP33N60EF-GE3
$ 3.7
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| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| TTI | SIHP33N60EF-GE3 | 1000 | 100 | Tube | 4h | |||||||
| TME | SIHP33N60EF-GE3 | 0 | 1 | 15h | ||||||||
| Newark | SIHP33N60EF-GE3 | 0 | 1K | |||||||||
| Avnet | SIHP33N60EF-GE3 | 0 | 1K | 2d | ||||||||
| Future Electronics | SIHP33N60EF-GE3 | 0 | 5 | Tube |
Cronologia dell'inventario
Tendenza a 3 mesi: +37.74%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
0 parti disponibili
Supply Chain
Country of OriginIsrael
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2014-11-19
Lifecycle StatusProduction (Last Updated: 4 months ago)
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Descrizioni
Descrizioni di Vishay SIHP33N60EF-GE3 fornite dai suoi distributori.
N-CH 650V 33A EF Series Power MOSFET with Fast Body Diode in TO-220
Single N-Channel 600 V 0.098 Ohm 155 nC 278 W Silicon Mosfet - TO-220-3
278W(Tc) 30V 4V@ 250¦ÌA 155nC@ 10 V 1N 600V 98m¦¸@ 16.5A,10V 33A 3.454nF@100V TO-220AB 9.01mm
Trans MOSFET N-CH 600V 33A 3-Pin(3+Tab) TO-220AB
VISHAY SIHP33N60EF-GE3 MOSFET, N CHANNEL, 600V, 33A, TO-220AB-3
Power Field-Effect Transistor, 33A I(D), 600V, 0.098ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET, N CH, 600V, 33A, TO-220AB-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 33A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.085ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V;
Alias del produttore
Vishay ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. Vishay può anche essere conosciuto con i seguenti nomi:
- VIS
- VISH
- VISHAY INTERTECHNOLOGY INC
- Vishay Thin Film
- Vishay Intertechnology
- VISHA
- Vishay Semiconductors
- VISAHY
- Vishay Intertech
- VISHY
- VISHAY INTERTECHNOLOGY ASIA PTE LTD
- Vishay Intertechnologies
- Vishay General Semiconductor - Diodes Division
- Vishay Semiconductor Opto Division
- VSHAY
- VISH/IR
- VSHY
- VSH
- VISHAY INTERTECHNOLOGY ASIA PT
- VISHAY ELECTRONIC
- VISHAY AMERICAS INC
- Vishay Semiconductor Diodes Division
- VISHAY OPTO
- VISHAY FOIL RESISTORS
- Vishay Polytech
- Vishay Semiconductor
- Vishay Sfernice
- Vishay Siliconix
- Vishay Dale
- Vishay BCcomponents
- Vishay Angstrohm
- Vishay Draloric
Cronologia dell'inventario
Tendenza a 3 mesi: +37.74%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
0 parti disponibili
Specifiche tecniche
Physical
Case/PackageTO-220-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight6.000006 g
Technical
Continuous Drain Current (ID)33 A
Drain to Source Resistance98 mΩ
Drain to Source Voltage (Vdss)600 V
Element ConfigurationSingle
Fall Time48 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance3.454 nF
Max Operating Temperature150 °C
Max Power Dissipation278 W
Min Breakdown Voltage600 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Rds On Max98 mΩ
Rise Time43 ns
Threshold Voltage4 V
Turn-Off Delay Time161 ns
Turn-On Delay Time28 ns