Vishay SIHP30N60E-E3

MOSFET, N CH, 600V, 29A, TO-220AB; Transistor Polarity: N Channel; Continuous Dra
$ 2.794
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Schede tecniche e documenti

Scarica le schede tecniche e la documentazione del produttore per Vishay SIHP30N60E-E3.

IHS

Datasheet8 pagine10 anni fa
Datasheet8 pagine13 anni fa

element14 APAC

Farnell

Newark

Future Electronics

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Export Control Classification Number (ECCN) CodeEAR99
Lifecycle StatusProduction (Last Updated: 4 months ago)

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Descrizioni

Descrizioni di Vishay SIHP30N60E-E3 fornite dai suoi distributori.

MOSFET, N CH, 600V, 29A, TO-220AB; Transistor Polarity:N Channel; Continuous Dra
E-Series N-Channel 600 V 0.125 O 130 nC Flange Mount Power Mosfet- TO-220AB
Trans MOSFET N-CH 600V 29A 3-Pin(3+Tab) TO-220AB
Power Field-Effect Transistor, 29A I(D), 600V, 0.125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET, N CH, 600V, 29A, TO-220AB; Transistor Polarity:N Channel; Continuous Drain Current Id:29A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.104ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:250W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:TO-220AB; No. of Pins:3; MSL:MSL 1 - Unlimited; Operating Temperature Range:-55°C to +150°C; Voltage Vgs Max:30V

Alias del produttore

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  • VIS
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  • VISHAY ELECTRONIC
  • VISHAY AMERICAS INC
  • Vishay Semiconductor Diodes Division
  • VISHAY OPTO
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