Vishay SI5855CDC-T1-E3

SI5855CDC-T1-E3 P-channel Mosfet Transistor, 3 A, 20 V, 8-PIN 1206 Chipfet
$ 0.87
Obsolete
Pagina del produttoreScheda dati

Prezzo e stock

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DistributorSKUMinPkg
RS (Formerly Allied Electronics)SI5855CDC-T1-E30300Bulk
16h
Win SourceWS-SI5855CDC-T1-E326.900310
1d
AnlinkdaSI5855CDC-T1-E355.313
1d
SHENGYU ELECTRONICSSI5855CDC-T1-E315.7291
23h
Fly-Wing TechnologySI5855CDC-T1-E310.957
22h

Schede tecniche e documenti

Scarica le schede tecniche e la documentazione del produttore per Vishay SI5855CDC-T1-E3.

IHS

Datasheet11 pagine10 anni fa
Datasheet11 pagine13 anni fa

Future Electronics

Newark

RS (Formerly Allied Electronics)

Supply Chain

Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2008-09-28
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2018-09-14
LTD Date2019-03-14

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Descrizioni

Descrizioni di Vishay SI5855CDC-T1-E3 fornite dai suoi distributori.

SI5855CDC-T1-E3 P-CHANNEL MOSFET TRANSISTOR, 3 A, 20 V, 8-PIN 1206 CHIPFET
RS (Formerly Allied Electronics)
Single P-Channel 20 V 0.222 Ohm 6.2 nC 1.3 W Silicon SMT Mosfet - SMD-8
Future Electronics
Trans MOSFET P-CH 20V 2.5A 8-Pin Chip FET T/R
Avnet
1.3W(Ta),2.8W(Tc) 8V 1V@ 250¦ÌA 6.8nC@ 5 V 1P 20V 144m¦¸@ 2.5A,4.5V 276pF@10V 1206-8 3.05mm*1.65mm
UnikeyIC
P-CH 20-V (G-S) MOSFET W/SCHOTKY DIODE
Vishay
Small Signal Field-Effect Transistor, 2.5A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
IHS
P CHANNEL MOSFET, -20V, 3.7A, 1206; Tran; P CHANNEL MOSFET, -20V, 3.7A, 1206; Transistor Polarity:P Channel + Schottky; Continuous Drain Current Id:-3.7A; Drain Source Voltage Vds:-20V; On Resistance Rds(on):222mohm; Rds(on) Test Voltage Vgs:8V; Threshold Voltage Vgs Typ:-1V
element14 APAC

Immagini

element14
RS (Formerly Allied Electronics)

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