Vishay SI4850EY-T1-GE3
$ 0.832
Production
Prezzo e stock
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Distributori di stock non autorizzati
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| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Verical | SI4850EY-T1-GE3 | 3112 | 8 | |||||||||
| Arrow Electronics | SI4850EY-T1-GE3 | 3112 | 1 | |||||||||
| DigiKey | SI4850EY-T1-GE3CT-ND | 1656 | 1 | Cut Tape | ||||||||
| TME | SI4850EY-T1-GE3 | 0 | 2500 | 9h | ||||||||
| TTI | SI4850EY-T1-GE3 | 0 | 2500 | Tape & Reel | 23h |
Cronologia dell'inventario
Tendenza a 3 mesi: -55.94%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
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Modelli CAD
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Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2001-11-07
Lifecycle StatusProduction (Last Updated: 4 months ago)
Parti correlate
InfineonIRF7478TRPBF
MOSFET, Power;N-Ch;VDSS 60V;RDS(ON) 20 Milliohms;ID 7A;SO-8;PD 2.5W;VGS +/-20V
InfineonIRF7478PBF
MOSFET, Power;N-Ch;VDSS 60V;RDS(ON) 20 Milliohms;ID 7A;SO-8;PD 2.5W;VGS +/-20V
VishaySI7850DP-T1-E3
Trans MOSFET N-CH 60V 6.2A 8-Pin PowerPAK SO T/R - Cut TR (SOS) (Alt: SI7850DP-T1-E3/BKN)
VishaySI7850DP-T1-GE3
Single N-Channel 60 V 0.022 Ohm SMT TrenchFET Power Mosfet - PowerPAK SO-8
Descrizioni
Descrizioni di Vishay SI4850EY-T1-GE3 fornite dai suoi distributori.
SI4850EY-T1-GE3 N-channel MOSFET Transistor; 8.5 A; 60 V; 8-Pin SOIC
N-CH MOSFET SO-8 60V 22MOHM @ 10V QG=27NC PWM OP - LEAD(PB) AND HALOGEN FREE
Trans MOSFET N-CH 60V 6A 8-Pin SOIC N T/R / MOSFET N-CH 60V 6A 8-SOIC
N Ch Mosfet; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:6A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:3V; Power Dissipation:1.7W Rohs Compliant: No |Vishay SI4850EY-T1-GE3.
MOSFET,N CH,DIODE,60V,8.5A,8-SOIC; Transistor Polarity:N Channel; Continuous Drain Current Id:6A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.018ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:3.3W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:8.5A; Power Dissipation Pd:3.3W; Voltage Vgs Max:20V
Alias del produttore
Vishay ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. Vishay può anche essere conosciuto con i seguenti nomi:
- VIS
- VISH
- VISHAY INTERTECHNOLOGY INC
- Vishay Thin Film
- Vishay Intertechnology
- VISHA
- Vishay Semiconductors
- VISAHY
- Vishay Intertech
- VISHY
- VISHAY INTERTECHNOLOGY ASIA PTE LTD
- Vishay Intertechnologies
- Vishay General Semiconductor - Diodes Division
- Vishay Semiconductor Opto Division
- VSHAY
- VISH/IR
- VSHY
- VSH
- VISHAY INTERTECHNOLOGY ASIA PT
- VISHAY ELECTRONIC
- VISHAY AMERICAS INC
- Vishay Semiconductor Diodes Division
- VISHAY OPTO
- VISHAY FOIL RESISTORS
- Vishay Polytech
- Vishay Semiconductor
- Vishay Sfernice
- Vishay Siliconix
- Vishay Dale
- Vishay BCcomponents
- Vishay Angstrohm
- Vishay Draloric
Cronologia dell'inventario
Tendenza a 3 mesi: -55.94%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
0 parti disponibili
Specifiche tecniche
Physical
Case/PackageSOIC
Contact PlatingTin
MountSurface Mount
Number of Pins8
Number of Terminals8
Weight506.605978 mg
Technical
Continuous Drain Current (ID)6 A
Drain to Source Breakdown Voltage60 V
Drain to Source Resistance22 mΩ
Drain to Source Voltage (Vdss)60 V
Element ConfigurationSingle
Fall Time12 ns
Gate to Source Voltage (Vgs)20 V
Max Operating Temperature175 °C
Max Power Dissipation1.7 W
Min Breakdown Voltage60 V
Min Operating Temperature-55 °C
Nominal Vgs3 V
Number of Channels1
Number of Elements1
Power Dissipation3.3 W
Rds On Max22 mΩ
Rise Time10 ns
Schedule B8541290080
Threshold Voltage3 V
Turn-Off Delay Time25 ns
Turn-On Delay Time10 ns
Dimensions
Height1.5 mm
Length5 mm
Width4 mm
Conformità
Classificazione ambientale
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Dichiarazioni di conformità