Vishay SI4427BDY-T1-GE3
Obsolete
Prezzo e stock
Distributori autorizzati
Distributori di stock non autorizzati
Rivenditori non autorizzati
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| TTI Europe | SI4427BDY-T1-GE3 | 0 | 2500 | Tape & Reel | 17h | |||||||
| Farnell | SI4427BDY-T1-GE3.. | 0 | 1 | Cut Tape | 14h | |||||||
| element14 APAC | SI4427BDY-T1-GE3.. | 0 | 1 | Cut Tape | 3h | |||||||
| Component Stockers USA | SI4427BDY-T1-GE3 | 3311 | >1wk | |||||||||
| Win Source | WS-SI4427BDY-T1-GE3 | 2500 | 2 | 14h |
Parti correlate
InfineonBSO083N03MSGXUMA1
1.56W(Ta) 20V 2V@ 250¦ÌA 27nC@ 10 V 1N 30V 8.3m¦¸@ 14A,10V 11A 2.1nF@15V SOP 1.65mm
InfineonIRF7467PBF
MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 9.4 Milliohms;ID 11A;SO-8;PD 2.5W;VGS +/-12V
Descrizioni
Descrizioni di Vishay SI4427BDY-T1-GE3 fornite dai suoi distributori.
Single P-Channel 30 V 0.0195 Ohm 70 nC 1.5 W Silicon SMT Mosfet - SOIC-8
Trans MOSFET P-CH 30V 9.7A 8-Pin SOIC N T/R
MOSFET Devices; VISHAY; SI4427BDY-T1-GE3; 9.7 A; 12 V; 1.5 W; 242 ns
Small Signal Field-Effect Transistor, 9.7A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET 30V 12.6A 2.5W 12.5mohm @ 4.5V
Transistor; Transistor Polarity:P Channel; Continuous Drain Current, Id:-12.6A; Drain Source Voltage, Vds:-30V; On Resistance, Rds(on):0.0195ohm; Rds(on) Test Voltage, Vgs:-2.5V; Threshold Voltage, Vgs Typ:-1.4V ;RoHS Compliant: Yes
Alias del produttore
Vishay ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. Vishay può anche essere conosciuto con i seguenti nomi:
- VIS
- VISH
- VISHAY INTERTECHNOLOGY INC
- Vishay Thin Film
- Vishay Intertechnology
- VISHA
- Vishay Semiconductors
- VISAHY
- Vishay Intertech
- VISHY
- VISHAY INTERTECHNOLOGY ASIA PTE LTD
- Vishay Intertechnologies
- Vishay General Semiconductor - Diodes Division
- Vishay Semiconductor Opto Division
- VSHAY
- VISH/IR
- VSHY
- VSH
- VISHAY INTERTECHNOLOGY ASIA PT
- VISHAY ELECTRONIC
- VISHAY AMERICAS INC
- Vishay Semiconductor Diodes Division
- VISHAY OPTO
- Vishay Techno
- VISHAY FOIL RESISTORS
- Vishay Semiconductor
- Vishay Sfernice
- Vishay Siliconix
- Vishay Dale
- Vishay BCcomponents
- Vishay Angstrohm
- Vishay Draloric
Specifiche tecniche
Physical
Case/PackageSOIC
MountSurface Mount
Number of Pins8
Number of Terminals8
Weight186.993455 mg
Technical
Continuous Drain Current (ID)9.7 A
Drain to Source Breakdown Voltage-30 V
Drain to Source Resistance10.5 mΩ
Dual Supply Voltage-30 V
Element ConfigurationSingle
Fall Time110 ns
Gate to Source Voltage (Vgs)12 V
Max Operating Temperature150 °C
Max Power Dissipation2.5 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Nominal Vgs-1.4 V
Number of Channels1
Number of Elements1
PackagingCut Tape
Power Dissipation1.5 W
Rds On Max10.5 mΩ
Resistance19.5 mΩ
Rise Time15 ns
Schedule B8541290080
TerminationSMD/SMT
Threshold Voltage-600 mV
Turn-Off Delay Time242 ns
Turn-On Delay Time12 ns
Dimensions
Height1.55 mm
Length5 mm
Width4 mm
Conformità
Classificazione ambientale
China RoHSCompliant
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Dichiarazioni di conformità