Vishay SI1308EDL-T1-GE3
$ 0.18
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| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Avnet | SI1308EDL-T1-GE3 | 48.000 | 3K | 17h | ||||||||
| Newark | SI1308EDL-T1-GE3 | 2970 | 1 | Cut Tape | ||||||||
| Verical | SI1308EDL-T1-GE3 | 15.000 | 3K | |||||||||
| Arrow Electronics | SI1308EDL-T1-GE3 | 15.000 | 3K | |||||||||
| Future Electronics | SI1308EDL-T1-GE3 | 9000 | 3K | Tape & Reel |
Cronologia dell'inventario
Tendenza a 3 mesi: -59.46%
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Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2011-11-21
Lifecycle StatusProduction (Last Updated: 4 months ago)
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Diodes Inc.DMN3065LW-7
Mosfet Bvdss: 25V~30V Sot323 T&r 3K Rohs Compliant: Yes |Diodes Inc. DMN3065LW-7
Descrizioni
Descrizioni di Vishay SI1308EDL-T1-GE3 fornite dai suoi distributori.
SI1308EDL-T1-GE3 N-CHANNEL MOSFET TRANSISTOR, 1.5 A, 30 V, 3-PIN SC-70
Power MOSFET, N Channel, 30 V, 1.5 A, 132 mOhm, SOT-323, 3 Pins, Surface Mount
Trans MOSFET N-CH 30V 1.4A 3-Pin SC-70 T/R / MOSFET N-CH 30V 1.4A SOT323
N-CHANNEL 30 V (D-S) MOSFET Small Signal Field-Effect Transistor, 1.4A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Channel Type:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:1.4A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:600Mv; Power Dissipation:500Mw; No. Of Pins:3Pins Rohs Compliant: No |Vishay SI1308EDL-T1-GE3.
MOSFET, N-CH, 30V, 1.4A, SC-70-3; Transistor Polarity:N Channel; Continuous Drain Current Id:1.4A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.11ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:500mW; Operating Temperature Min:-50°C; Operating Temperature Max:150°C; Transistor Case Style:SOT-323; No. of Pins:3; MSL:MSL 1 - Unlimited; Operating Temperature Range:-50°C to +150°C; Voltage Vgs Max:30V; Voltage Vgs th Max:30V
Alias del produttore
Vishay ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. Vishay può anche essere conosciuto con i seguenti nomi:
- VIS
- VISH
- VISHAY INTERTECHNOLOGY INC
- Vishay Thin Film
- Vishay Intertechnology
- VISHA
- Vishay Semiconductors
- VISAHY
- Vishay Intertech
- VISHY
- VISHAY INTERTECHNOLOGY ASIA PTE LTD
- Vishay Intertechnologies
- Vishay General Semiconductor - Diodes Division
- Vishay Semiconductor Opto Division
- VSHAY
- VISH/IR
- VSHY
- VSH
- VISHAY INTERTECHNOLOGY ASIA PT
- VISHAY ELECTRONIC
- VISHAY AMERICAS INC
- Vishay Semiconductor Diodes Division
- VISHAY OPTO
- VISHAY FOIL RESISTORS
- Vishay Polytech
- Vishay Semiconductor
- Vishay Sfernice
- Vishay Siliconix
- Vishay Dale
- Vishay BCcomponents
- Vishay Angstrohm
- Vishay Draloric
Cronologia dell'inventario
Tendenza a 3 mesi: -59.46%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
0 parti disponibili
Specifiche tecniche
Physical
Case/PackageSOT-323
MountSurface Mount
Number of Pins3
Number of Terminals3
Weight124.596154 mg
Technical
Continuous Drain Current (ID)1.4 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance132 mΩ
Drain to Source Voltage (Vdss)30 V
Element ConfigurationSingle
Fall Time8 ns
Gate to Source Voltage (Vgs)12 V
Input Capacitance105 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation500 mW
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation300 mW
Rds On Max132 mΩ
Resistance132 mΩ
Rise Time9 ns
Schedule B8541210080
Threshold Voltage600 mV
Turn-Off Delay Time8 ns
Turn-On Delay Time2 ns
Dimensions
Height1.1 mm
Length2.2 mm
Width1.35 mm
Conformità
Classificazione ambientale
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Dichiarazioni di conformità