Vishay SI1016CX-T1-GE3

SI1016CX-T1-GE3 Dual N/p-channel Mosfet Transistor, 0.6 A, 20 V, 6-PIN SOT-563
$ 0.159
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DistributorSKUMinPkg
AvnetSI1016CX-T1-GE339.0003K
3d
Newark
2
SI1016CX-T1-GE320.0335Cut Tape
Verical
4
SI1016CX-T1-GE312.0003K
Arrow Electronics
2
SI1016CX-T1-GE329901
RutronikTMOSS673130003K
12h

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Datasheet12 pagine7 anni fa
Technical Drawing1 pagina18 anni fa

Newark

Farnell

RS (Formerly Allied Electronics)

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Lifecycle StatusProduction (Last Updated: 4 months ago)

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Descrizioni

Descrizioni di Vishay SI1016CX-T1-GE3 fornite dai suoi distributori.

SI1016CX-T1-GE3 DUAL N/P-CHANNEL MOSFET TRANSISTOR, 0.6 A, 20 V, 6-PIN SOT-563
RS (Formerly Allied Electronics)
VISHAY SI1016CX-T1-GE3 Dual MOSFET, N and P Channel, 600 mA, 20 V, 0.33 ohm, 4.5 V, 400 mV
Jak Electronics
Si1016CX Series 20 V 396 mOhm Surface Mount N and P-Channel MOSFET - SC-89-6
Future Electronics
MOSFET N/P-CH 20V SC89-6 / Trans MOSFET N/P-CH 20V 0.6A 6-Pin SC-89 T/R
Win Source
Small Signal Field-Effect Transistor, 0.6A I(D), 20V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET
Semicontronic
MOSFET, NP CH, 20V, W DIODE, SOT563F; Transistor Polarity:N and P Channel; Continuous Drain Current Id:600mA; Drain Source Voltage Vds:20V; On Resistance Rds(on):0.33ohm; Rds(on) Test Voltage Vgs:4.5V; Power Dissipation Pd:220mW; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOT-563; No. of Pins:6; Continuous Drain Current Id, N Channel:600mA; Continuous Drain Current Id, P Channel:-600mA; Drain Source Voltage Vds, N Channel:20V; Drain Source Voltage Vds, P Channel:-20V; Module Configuration:High Side; On Resistance Rds(on), N Channel:0.33ohm; On Resistance Rds(on), P Channel:0.63ohm; Power Dissipation Pd:220mW
element14 APAC

Immagini

Vishay
RS
Farnell
Farnell
Farnell
TME
Newark
Future Electronics

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