Technical
Breakdown Voltage51 V
Clamping Voltage70.1 V
Collector Base Voltage (VCBO)-40 V
Collector Emitter Saturation Voltage-400 mV
Collector Emitter Voltage (VCEO)50 V
Continuous Collector Current-200 mA
Drain to Source Voltage (Vdss)-60 V
Dropout Voltage950 mV
Emitter Base Voltage (VEBO)40 V
Forward Voltage1 V
Gain Bandwidth Product1 MHz
Gate to Source Voltage (Vgs)-1.5 V
hFE Min100
Input Capacitance436 pF
Max Forward Surge Current (Ifsm)2.5 A
Max Input Voltage35 V
Max Junction Temperature (Tj)150 °C
Max Operating Temperature125 °C
Max Output Current100 mA
Max Output Voltage12.48 V
Max Repetitive Reverse Voltage (Vrrm)250 V
Max Reverse Leakage Current1 µA
Max Supply Voltage35 V
Min Input Voltage35 V
Min Operating Temperature0 °C
Min Supply Voltage2 V
Nominal Input Voltage35 V
Nominal Output Voltage12 V
Nominal Supply Current25 nA
Number of Channels2
Number of Outputs1
Output Current100 mA
Output TypeFixed
Output Voltage5 V
PackagingCut Tape
Peak Pulse Current21.4 A
Peak Pulse Power 1.5 kW
PolarityPositive
Power Dissipation150 mW
Quiescent Current3 mA
Reference Voltage1.25 V
Response Time1.3 µs
Reverse Recovery Time50 ns
Reverse Standoff Voltage24 V
TerminationSMD/SMT
Test Current2.5 mA
Voltage12 V
Voltage Tolerance5 %
Zener Voltage75 V