Technical
Breakdown Voltage51 V
Clamping Voltage70.1 V
Collector Base Voltage (VCBO)-40 V
Collector Emitter Saturation Voltage-400 mV
Collector Emitter Voltage (VCEO)50 V
Continuous Collector Current-200 mA
Drain to Source Voltage (Vdss)-60 V
Emitter Base Voltage (VEBO)40 V
Forward Voltage1 V
Gain Bandwidth Product1 MHz
Gate to Source Voltage (Vgs)-1.5 V
hFE Min100
Input Bias Current250 nA
Input Capacitance436 pF
Input Offset Voltage (Vos)9 mV
Max Forward Surge Current (Ifsm)2.5 A
Max Junction Temperature (Tj)150 °C
Max Operating Temperature70 °C
Max Repetitive Reverse Voltage (Vrrm)250 V
Max Reverse Leakage Current1 µA
Max Supply Current2.5 mA
Max Supply Voltage36 V
Min Operating Temperature0 °C
Min Supply Voltage3.5 V
Nominal Supply Current1 mA
Number of Channels2
Number of Circuits2
Operating Supply Voltage5 V
Output Current16 mA
Output Current per Channel16 mA
Peak Pulse Current21.4 A
Peak Pulse Power 1.5 kW
Power Dissipation150 mW
Response Time1.3 µs
Reverse Recovery Time50 ns
Reverse Standoff Voltage24 V
Temperature GradeCommercial
Test Current2.5 mA
Zener Voltage75 V