STMicroelectronics STP26NM60N
$ 3.246
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Cronologia dell'inventario
Tendenza a 3 mesi: +190%
Modelli CAD
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Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2009-04-29
Lifecycle StatusProduction (Last Updated: 1 month ago)
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Descrizioni
Descrizioni di STMicroelectronics STP26NM60N fornite dai suoi distributori.
N-channel 600 V, 0.135 Ohm typ., 20 A MDmesh(TM) II Power MOSFET in TO-220 package
Single N-Channel 600 V 0.165 Ohm 60 nC 140 W Flange Mount Mosfet - TO-220-3
STP26NM60N N-CHANNEL MOSFET TRANSISTOR, 20 A, 600 V, 4-PIN TO-220
Power MOSFET, N Channel, 600 V, 10 A, 0.135 ohm, TO-220, Through Hole
Power Field-Effect Transistor, 20A I(D), 600V, 0.165ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
STMicroelectronics NChannel EnhancedMOSTube MDmeshseries, Vds=600 V, 20 A, TO-220encapsulation, Through hole mounting, 3Pin
Mosfet, N-Ch, 600V, 10A, 150Deg C, 140W; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:10A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:3V; Msl:- Rohs Compliant: Yes |Stmicroelectronics STP26NM60N
Alias del produttore
STMicroelectronics ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. STMicroelectronics può anche essere conosciuto con i seguenti nomi:
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
Cronologia dell'inventario
Tendenza a 3 mesi: +190%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
0 parti disponibili
Specifiche tecniche
Physical
Case/PackageTO-220
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)20 A
Drain to Source Breakdown Voltage600 V
Drain to Source Resistance165 mΩ
Drain to Source Voltage (Vdss)600 V
Dual Supply Voltage600 V
Element ConfigurationSingle
Fall Time50 ns
Gate to Source Voltage (Vgs)25 V
Input Capacitance1.8 nF
Max Operating Temperature150 °C
Max Power Dissipation140 W
Min Breakdown Voltage600 V
Min Operating Temperature-55 °C
Nominal Vgs3 V
Number of Elements1
Power Dissipation140 W
Rds On Max165 mΩ
Resistance165 MΩ
Rise Time25 ns
TerminationThrough Hole
Turn-Off Delay Time85 ns
Turn-On Delay Time13 ns
Dimensions
Height15.75 mm
Length10.4 mm
Width4.6 mm
Conformità
Classificazione ambientale
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant