STMicroelectronics STN2NE10
Obsolete
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Distributori autorizzati
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| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Microchip USA | STN2NE10 | 123 | 3500 | Tray | 3d | |||||||
| Win Source | WS-STN2NE10 | 12.200 | 105 | 14h | ||||||||
| Worldway Electronics | STN2NE10 | 23.248 | 7 | Tape & Reel | 1d | |||||||
| Aztech | STN2NE10 | 5409 | 2d | |||||||||
| Chipsmall Limited | STN2NE10 | 300.000 | 1 | 6h |
Schede tecniche e documenti
Scarica le schede tecniche e la documentazione del produttore per STMicroelectronics STN2NE10.
Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1999-01-19
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2007-11-23
LTD Date2008-05-23
Descrizioni
Descrizioni di STMicroelectronics STN2NE10 fornite dai suoi distributori.
N-Channel 100V - 0.33 Ohm - 2A - SOT-223 STripFET(TM) POWER MOSFET
Power MOSFET Transistors N-Ch 100 Volt 2 Amp
Power Field-Effect Transistor, 2A I(D), 100V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:100V; Continuous Drain Current, Id:2A; On Resistance, Rds(on):0.4ohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:SOT-223 ;RoHS Compliant: Yes
Alias del produttore
STMicroelectronics ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. STMicroelectronics può anche essere conosciuto con i seguenti nomi:
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
Specifiche tecniche
Physical
Case/PackageSOT-223
MountSurface Mount
Number of Pins4
Number of Terminals4
Technical
Continuous Drain Current (ID)2 A
Current Rating2 A
Drain to Source Breakdown Voltage100 V
Drain to Source Resistance400 mΩ
Drain to Source Voltage (Vdss)100 V
Fall Time7 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance305 pF
Max Operating Temperature150 °C
Max Power Dissipation2.5 W
Min Breakdown Voltage100 V
Min Operating Temperature-65 °C
Number of Elements1
Power Dissipation2.5 W
Rds On Max400 mΩ
Rise Time17 ns
Turn-Off Delay Time25 ns
Voltage Rating (DC)100 V
Schede tecniche e documenti
Scarica le schede tecniche e la documentazione del produttore per STMicroelectronics STN2NE10.