STMicroelectronics STGW60H65DFB

Trench gate field-stop IGBT, HB series 650 V, 60 A high speed
$ 2.119
Production
Pagina del produttoreScheda dati

Prezzo e stock

Vedi tutte le interruzioni di prezzo
DistributorSKUMinPkg
NewarkSTGW60H65DFB6291
Arrow Electronics
2
STGW60H65DFB2101
Verical
3
STGW60H65DFB93
Future Electronics
2
STGW60H65DFB120030Tube
TME
2
STGW60H65DFB2261
15h

Schede tecniche e documenti

Scarica le schede tecniche e la documentazione del produttore per STMicroelectronics STGW60H65DFB.

Newark

Datasheet19 pagine13 anni fa
Datasheet21 pagine6 anni fa

Future Electronics

Cronologia dell'inventario

Trend di 3 mesi:
-88.12%
Powered bySpectra logo

Modelli CAD

Scarica il simbolo STMicroelectronics STGW60H65DFB, l'impronta e i modelli STEP 3D dai nostri partner di fiducia.

FONTEeCADmCADFILE
Component Search Engine
SimboloImpronta
3DScarica
Il sito del partner si aprirà in una nuova scheda quando si scaricano i modelli CAD
Scaricando i modelli CAD da Octopart, accetti i nostri Termini e condizioni e l'Informativa sulla privacy.

Supply Chain

Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2013-03-12
Lifecycle StatusProduction (Last Updated: 4 months ago)

Parti correlate

STMicroelectronicsSTGW40H65DFB
Trench gate field-stop IGBT, HB series 650 V, 40 A high speed
Dettagli
STMicroelectronicsSTGWA60H65DFB
Trench gate field-stop IGBT, HB series 650 V, 60 A high speed
Dettagli
STMicroelectronicsSTGW40H65FB
IGBT 650V 80A 283W TO247 / IGBT Trench Field Stop 650 V 80 A 283 W Through Hole TO-247-3
Dettagli
InfineonIKW50N65H5FKSA1
Trans IGBT Chip N=-CH 650V 80A 305000mW 3-Pin(3+Tab) TO-247 Tube
Dettagli
onsemiFGH40N65UFDTU-F085
Trans IGBT Chip N-CH 650V 80A 290000mW Automotive 3-Pin(3+Tab) TO-247 Tube
Dettagli
onsemiNGTB30N65IHL2WG
NGTB Series 650 V 60 A Flange Mount Trench Field Stop IGBT - TO-247
Dettagli

Descrizioni

Descrizioni di STMicroelectronics STGW60H65DFB fornite dai suoi distributori.

Trench gate field-stop IGBT, HB series 650 V, 60 A high speed
STMicroelectronics
Trans IGBT Chip N-CH 650V 80A 375000mW 3-Pin(3+Tab) TO-247 Tube
Verical
IGBT, SINGLE, 650V, 80A, TO-247-3; DC Collector Current: 80A; Collector Emitter Saturation Voltage Vce(on): 1.6V; Power Dissipation Pd: 375W; Collector Emitter Voltage V(br)ceo: 650V; Transistor Case Style: TO-247; No. of Pin
Farnell
Igbt, Single, 650V, 80A, To-247; Continuous Collector Current:80A; Collector Emitter Saturation Voltage:1.6V; Power Dissipation:375W; Collector Emitter Voltage Max:650V; No. Of Pins:3Pins; Operating Temperature Max:175°C; Msl:- Rohs Compliant: Yes |Stmicroelectronics STGW60H65DFB
Newark

Immagini

element14 APAC
Augswan
Farnell
TME
Lanka Micro
RS (Formerly Allied Electronics)
UTSource
Future Electronics

Alias del produttore

STMicroelectronics ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. STMicroelectronics può anche essere conosciuto con i seguenti nomi:

  • ST MICRO
  • STM
  • SGS
  • SGS THOMSON
  • INMOS
  • STMICROE
  • STMICROEL
  • STMICR
  • ST MIC
  • ST MICROELECTRONIC
  • SGS THOMPSON
  • SESCOSEM
  • STMICROELECT
  • ST8
  • STMICROELECTRON
  • WAFERSCALE
  • SGS-ATES
  • ST MICROELECTRONICS SEMI
  • ST/SGS
  • ST MICROELECTRO
  • SGST
  • THOMS
  • STMICROELE
  • WAFERSCALE INTEGRATION INC
  • SGS-Thomson Microelectronics
  • ST Microeletronics