STMicroelectronics STB70NF3LLT4
$ 0.67
Obsolete
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Schede tecniche e documenti
Scarica le schede tecniche e la documentazione del produttore per STMicroelectronics STB70NF3LLT4.
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Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1980-01-04
Lifecycle StatusObsolete (Last Updated: 1 month ago)
LTB Date2020-10-02
LTD Date2021-04-02
Parti correlate
InfineonIRL3103STRLPBF
MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 12 Milliohms;ID 64A;D2Pak;PD 94W;VGS +/-16V
onsemiNTB75N03RG
Tube Surface Mount N-Channel Single Mosfet Transistor 9.7A Ta 75A Tc 75A 74.4W 18.4ns
InfineonIRF3709STRLPBF
MOSFET N-CH 30V 90A D2PAK / Trans MOSFET N-CH 30V 90A 3-Pin(2+Tab) D2PAK T/R
InfineonIRF3709SPBF
MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 6.4Milliohms;ID 90A;D2Pak;PD 120W;VGS +/-20
Descrizioni
Descrizioni di STMicroelectronics STB70NF3LLT4 fornite dai suoi distributori.
N-CHANNEL 30V - 0.008 OHM - 70A D2PAK LOW GATE CHARGE STripFET MOSFET
STB70NF3LLT4 N-CHANNEL MOSFET TRANSISTOR, 70 A, 30 V, 3-PIN D2PAK
Trans MOSFET N-CH 30V 70A 3-Pin(2+Tab) D2PAK T/R
N-CHANNEL 30V-0.0075 OHM-70A-D2PAK LOW GATE CHARGE STRIPFET II POWER MOSFET Power Field-Effect Transistor, 70A I(D), 30V, 0.0095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
MOSFET, N CH, 30V, 70A, D2PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:35A; Drain Source Voltage Vds:30V; On Resistance Rds(on):7.5mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1V; Power Dissipation Pd:100W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:D2-PAK; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:70A; Package / Case:D2-PAK; Power Dissipation Pd:100W; Termination Type:SMD; Transistor Type:Power MOSFET; Voltage Vds Typ:30V; Voltage Vgs Max:16V; Voltage Vgs Rds on Measurement:10V
Alias del produttore
STMicroelectronics ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. STMicroelectronics può anche essere conosciuto con i seguenti nomi:
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
Specifiche tecniche
Physical
Case/PackageD2PAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)70 A
Current Rating70 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance9.5 mΩ
Drain to Source Voltage (Vdss)30 V
Dual Supply Voltage30 V
Element ConfigurationSingle
Fall Time28 ns
Gate to Source Voltage (Vgs)16 V
Input Capacitance1.65 nF
Max Operating Temperature175 °C
Max Power Dissipation100 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Nominal Vgs1 V
Number of Elements1
PackagingTape and Reel
Power Dissipation100 W
Rds On Max10 mΩ
Rise Time165 ns
TerminationSMD/SMT
Threshold Voltage1 V
Turn-Off Delay Time27 ns
Turn-On Delay Time23 ns
Voltage Rating (DC)30 V
Dimensions
Height4.6 mm
Length10.75 mm
Width10.4 mm
Schede tecniche e documenti
Scarica le schede tecniche e la documentazione del produttore per STMicroelectronics STB70NF3LLT4.
Conformità
Classificazione ambientale
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant