STMicroelectronics STB35NF10T4
$ 1.18
Obsolete
Prezzo e stock
Distributori autorizzati
Distributori di stock non autorizzati
Rivenditori non autorizzati
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| RS (Formerly Allied Electronics) | STB35NF10T4 | 0 | 5 | Bulk | 12h | |||||||
| Farnell | STB35NF10T4 | 0 | 1 | Cut Tape | 16h | |||||||
| Win Source | WS-STB35NF10T4 | 920 | 22 | 21h | ||||||||
| Worldway Electronics | STB35NF10T4 | 24.268 | 7 | Tape & Reel | 21h | |||||||
| GreenTree Electronics | STB35NF10T4 | 2000 | 1d |
Schede tecniche e documenti
Scarica le schede tecniche e la documentazione del produttore per STMicroelectronics STB35NF10T4.
Modelli CAD
Scarica il simbolo STMicroelectronics STB35NF10T4, l'impronta e i modelli STEP 3D dai nostri partner di fiducia.
| FONTE | eCAD | mCAD | FILE |
|---|---|---|---|
 SnapEDA | Impronta | Scarica | |
 Ultra Librarian | SimboloImpronta | Scarica |
Il sito del partner si aprirà in una nuova scheda quando si scaricano i modelli CAD
Scaricando i modelli CAD da Octopart, accetti i nostri Termini e condizioni e l'Informativa sulla privacy.
Parti alternative
Questo componente
Parti alternative
Price @ 1000
$ 1.18
$ 1.2
Stock
607,732
49,426
Authorized Distributors
2
1
Mount
Surface Mount
Surface Mount
Case/Package
D2PAK
D2PAK
Drain to Source Voltage (Vdss)
100 V
-
Continuous Drain Current (ID)
40 A
40 A
Threshold Voltage
3 V
-
Rds On Max
35 mΩ
-
Gate to Source Voltage (Vgs)
20 V
20 V
Power Dissipation
115 W
-
Input Capacitance
1.55 nF
1.55 nF
Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1980-01-04
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2020-10-02
LTD Date2021-04-02
Parti correlate
STMicroelectronicsSTB30NF10T4
N-CHANNEL 100V 0.038 OHM 35A D2PAK LOW GATE CHARGE STripFET II MOSFET
STMicroelectronicsSTB40NF10T4
Mosfet Transistor, N Channel, 40 A, 100 V, 28 Mohm, 10 V, 1.7 V |Stmicroelectronics STB40NF10T4
InfineonIRF540ZSTRLPBF
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 21Milliohms;ID 36A;D2Pak;PD 92W;VGS +/-20V
InfineonIRF540ZSTRRPBF
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 21Milliohms;ID 36A;D2Pak;PD 92W;VGS +/-20V
Descrizioni
Descrizioni di STMicroelectronics STB35NF10T4 fornite dai suoi distributori.
N-Channel 100V - 0.030 Ohm - 40A - D2PAK LOW GATE CHARGE StripFET(TM) POWER MOSFET
STB35NF10T4 N-CHANNEL MOSFET TRANSISTOR, 40 A, 100 V, 3-PIN D2PAK
115W(Tc) 20V 4V@ 250¦ÌA 55nC@ 10 V 1N 100V 35m¦¸@ 17.5A,10V 40A 1.55nF@25V D2PAK 4.83mm
Trans MOSFET N-CH 100V 40A 3-Pin(2+Tab) D2PAK T/R
MOSFET, N CH, 100V, 40A, D2PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:17.5A; Drain Source Voltage Vds:100V; On Resistance Rds(on):30mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:115W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:D2-PAK; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:40A; Package / Case:D2-PAK; Power Dissipation Pd:115W; Termination Type:SMD; Transistor Type:Power MOSFET; Voltage Vds Typ:100V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V
Alias del produttore
STMicroelectronics ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. STMicroelectronics può anche essere conosciuto con i seguenti nomi:
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
Specifiche tecniche
Physical
Case/PackageD2PAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)40 A
Current Rating40 A
Drain to Source Breakdown Voltage100 V
Drain to Source Resistance35 mΩ
Drain to Source Voltage (Vdss)100 V
Dual Supply Voltage100 V
Element ConfigurationSingle
Fall Time15 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.55 nF
Max Operating Temperature175 °C
Max Power Dissipation115 W
Min Breakdown Voltage100 V
Min Operating Temperature-55 °C
Nominal Vgs3 V
Number of Elements1
PackagingTape and Reel
Power Dissipation115 W
Rds On Max35 mΩ
Rise Time60 ns
Schedule B8541290080
TerminationSMD/SMT
Threshold Voltage3 V
Turn-Off Delay Time60 ns
Turn-On Delay Time17 ns
Voltage Rating (DC)100 V
Dimensions
Height4.6 mm
Length10.75 mm
Width10.4 mm
Schede tecniche e documenti
Scarica le schede tecniche e la documentazione del produttore per STMicroelectronics STB35NF10T4.
Conformità
Classificazione ambientale
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant