STMicroelectronics ESM2012DV

Power Bipolar Transistor, 120A I(C), 125V V(BR)CEO, 1-Element, NPN, Silicon, 4 Pin

TRANSISTOR, DARLINGTON SOT-227; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 125V; DC Collector Current: 120A; DC Current Gain hFE: 1200hFE; Transistor Case Style: SOT-227; MSL: -; SVHC: No SVHC (17-Dec-2015);

DARLINGTON TRANSISTOR, SOT-227; Transistor Type:Bipolar Darlington; Transistor Polarity:NPN; Collector-to-Emitter Breakdown Voltage:125V; Current Ic Continuous a Max:120A; Voltage, Vce Sat Max:1.5V; Power Dissipation:175W; Min ;RoHS Compliant: Yes

DARLINGTON TRANSISTOR, SOT-227; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:125V; Power Dissipation Pd:175W; DC Collector Current:120A; DC Current Gain hFE:1200; Transistor Case Style:ISOTOP; No. of Pins:4; SVHC:No SVHC (20-Jun-2011); Av Current Ic:120A; Collector Emitter Voltage Vces:1.5V; Continuous Collector Current Ic Max:120A; Current Ib:2A; Current Ic Continuous a Max:120A; Current Ic hFE:120A; External Depth:38.2mm; External Length / Height:12.2mm; External Width:25.4mm; Hfe Min:1200; Hfe Typ:1200; No. of Transistors:1; Package / Case:ISOTOP; Pin Configuration:b; Power Dissipation Pd:175W; Power Dissipation Ptot Max:175W; Pulsed Current Icm:128A; Termination Type:Screw; Transistor Type:Darlington; Voltage Vcbo:150V