STMicroelectronics 2STD1665T4

TRANS NPN 65V 6A DPAK / Bipolar (BJT) Transistor NPN 65 V 6 A 15 W Surface Mount DPAK

Bipolar Transistors - BJT 150V Vcbo 65V Vceo 6A NPN Low Voltage

Low voltage fast-switching NPN power transistor

Trans GP BJT NPN 65V 6A 15000mW 3-Pin(2+Tab) DPAK T/R

Power Bipolar Transistor, 6A I(C), 65V V(BR)CEO, 1-Element, NPN, Silicon, TO-252, Plastic/Epoxy, 2 Pin

2STD1665T4 NPN BIPOLAR TRANSISTOR, 6 A, 65 V, 3-PIN DPAK

NPN BJT Transistor, 65V VCEO, 6A Ic, 15W Pd, DPAK

Power Bipolar, NPN, 1V, 150mA, DPAK, Tape and Reel

STMicroelectronics NPNTransistor, DPAK (TO-252)encapsulation, SMD mount, Maximum DC collector current6 A, maximum collector-emission voltage65 V

TRANSISTOR, NPN DPAK; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 65V; Transition Frequency ft: -; Power Dissipation Pd: 15W; DC Collector Current: 6A; DC Current Gain hFE: 320hFE; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (17-Dec-2015); Collector Emitter Saturation Voltage Vce(on): 50mV; Continuous Collector Current Ic Max: 6A; Current Ic Continuous a Max: 6A; Current Ic hFE: 5A; Hfe Min: 90; Power Dissipation Ptot Max: 15W; Termination Type: Surface Mount Device; Voltage Vcbo: 150V

Transistor Polarity = NPN / Configuration = Single / Continuous Collector Current (Ic) A = 6 / Collector-Emitter Voltage (Vceo) V = 65 / DC Current Gain (hFE) = 350 / Collector-Base Voltage (Vcbo) V = 150 / Emitter-Base Voltage (Vebo) V = 7 / Operating Temperature Min. °C = -65 / Operating Temperature Max. °C = 150 / Power Dissipation (Pd) W = 15 / Package Type = DPAK / Pins = 3 / Mounting Type = SMD / Packaging = Tape & Reel / Collector Emitter Saturation Voltage Max. (Vce(sat)) mV = 380 / Base Emitter Saturation Voltage Max. (Vbe(sat)) V = 1.15