MOSFET, DUAL PP SO-8; Transistor Polarity: Dual P Channel; Continuous Drain Current Id: 2.3A; Drain Source Voltage Vds: -20V; On Resistance Rds(on): 0.25ohm; Rds(on) Test Voltage Vgs: -10V; Threshold Voltage Vgs: -1V; Power Di
MOSFET, DUAL PP SO-8; Transistor Polarity:P Channel; Power Dissipation Pd:2W; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (15-Dec-2010); Continuous Drain Current Id:2.3A; Drain Source Voltage Vds:20V; N-channel Gate Charge:6.7nC; No. of Transistors:2; On Resistance Rds(on):250mohm; On State Resistance @ Vgs = 4.5V:400mohm; On State resistance @ Vgs = 10V:250mohm; Package / Case:SO-8 (SOIC-8); Power Dissipation Pd:2W; Pulse Current Idm:10A; SMD Marking:SI9953DY; Termination Type:SMD; Voltage Vgs Rds on Measurement:4.5V
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