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IGBT Array & Module Transistor, Dual NPN, 250 A, 1.95 V, 1.1 kW, 1.7 kV, Module
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Insulated Gate Bipolar Transistor, 200A I(C), 1700V V(BR)CES, N-Channel
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Insulated Gate Bipolar Transistor, 300A I(C), 1700V V(BR)CES, N-Channel
Descrizioni
Descrizioni di Semikron SKM600GA176D fornite dai suoi distributori.
Trans IGBT Module N-CH 1700V 660A 4-Pin
IGBT MODULE, N CH, 1.7KV, 660A; Transistor Polarity: N Channel; DC Collector Current: 660A; Collector Emitter Saturation Voltage Vce(on): 2V; Power Dissipation Pd: -; Collector Emitter Voltage V(br)ceo: 1.7kV; Transistor Case
Features: Homogeneous Si Trench = Trenchgate technology V CE(sat) with positive temperature coefficient High short circuit capability, self limiting to 6 x I C Typical Applications: AC inverter drives mains 575 - 790 V AC Public transport (auxiliary systems)
Igbt, Module, 1.7Kv, 660A, Semitrans 4; Continuous Collector Current:660A; Collector Emitter Saturation Voltage:2V; Power Dissipation:-; Operating Temperature Max:150°C; Igbt Termination:Stud; Collector Emitter Voltage Max:1.7Kv Rohs Compliant: Yes |Semikron SKM 600 GA 176 D
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Semikron ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. Semikron può anche essere conosciuto con i seguenti nomi:
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- Sindopower / Semikron
- Semikron Danfoss Elektronik
- semicron
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- SMK CORP
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- SEMIKRON/PRIMO
- Mikron Manufacturing