Semikron SKM300GAL063D

Insulated Gate Bipolar Transistor, 400A I(C), 600V V(BR)CES, N-Channel

Igbt Module, 600V, 400A, Semitrans 3; Continuous Collector Current:400A; Collector Emitter Saturation Voltage:2.5V; Power Dissipation:-; Operating Temperature Max:150°C; Igbt Termination:Stud; Collector Emitter Voltage Max:600V Rohs Compliant: Yes |Semikron SKM 300 GAL 063D

not recommended for new design Features: NPT- Non punch-through IGBT Low tail current with low temperature dependence High short circuit capability, self limiting if term. G is clamped to E Pos. temp.-coeff. of V CEsat 50 % less turn off losses 30 % less short circuit current Very low C ies , C oes , C res Latch-up free Fast & soft inverse CAL diodes Isolated copper baseplate using DCB Direct Copper Bonding Technology without hard mould Large clearance (13 mm) and creepage distances (20 mm) Typical Applications: Switching (not for linear use) Switched mode power supplies AC inverter servo drives UPS uninterruptable power supplies Welding inverters