Semikron SKM 500GA123D
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Insulated Gate Bipolar Transistor, 500A I(C), 1200V V(BR)CES, N-Channel
Igbt Module, 1.2Kv, 500A, Semitrans 4; Transistor, Polaridad:Canal N; Corriente De Colector Dc:500A; Tensión De Saturación Colector-Emisor Vce(On):1.2Kv; Disipación De Potencia Pd:-; Tensión Colector Emisor V(Br)Ceo:1.2Kv |Semikron SKM 500GA123D
not recommended for new design Features: MOS input (voltage controlled) N channel, homgeneous Si Low inductance case Very low tail current with low temperature dependence High short circuit capability, self limiting to 6 x I cnom Latch-up free Fast & soft CAL diodes Isolated copper baseplate using DBC Direct Copper Bonding Technology Large clearance (12 mm) and creepage distances (20 mm) Typical Applications: AC inverter drives UPS
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