onsemi SGP6N60UFDTU

Insulated Gate Bipolar Transistor, 6A I(C), 600V V(BR)CES, N-Channel, TO-220AB
$ 0.654
Obsolete
Pagina del produttoreScheda dati

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DistributorSKUMinPkg
VericalSGP6N60UFDTU532429
Rochester ElectronicsSGP6N60UFDTU869
13h
Win SourceWS-SGP6N60UFDTU620070
14h
Worldway ElectronicsSGP6N60UFDTU23.3167Tube
1d
SHENGYU ELECTRONICSSGP6N60UFDTU87351
5d

Schede tecniche e documenti

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Scheda dati ufficiale10 anni fa

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Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2013-09-24
Lifecycle StatusObsolete (Last Updated: 4 months ago)

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Descrizioni

Descrizioni di onsemi SGP6N60UFDTU fornite dai suoi distributori.

Insulated Gate Bipolar Transistor, 6A I(C), 600V V(BR)CES, N-Channel, TO-220AB
IHS
Tube Through Hole N-CHANNEL SINGLE WITH BUILT-IN DIODE IGBT Transistor 2.6V @ 15V 3A 6A 30W 52ns
Fly-Wing Technology
IGBT 600V 6A 30W TO220
DigiKey
Discrete, High Performance IGBT with Diode
Onlinecomponents.com
IGBT 600V 6A TO-220-3
DigiKey Marketplace
IGBTs Dis,High Perf IGBT
Mouser
MISCELLANEOUS MOSFETS;
Farnell
N-CHANNEL IGBT
Digi-ic_SMART PIONEER

Immagini

Augswan
Rochester Electronics

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  • onsemi / Fairchild
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