onsemi RURD4120S9A-F085
$ 0.521
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Cronologia dell'inventario
Tendenza a 3 mesi: -1.18%
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Schede tecniche e documenti
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Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.10.00.80
Introduction Date2011-10-28
Lifecycle StatusProduction (Last Updated: 2 months ago)
Parti correlate
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VISHAY SEMICONDUCTOR VS-5EWX06FN-M3 Rectifier Diode, Single, 600 V, 5 A, 2.9 V, 21 ns, 50 A
Diodes Inc.MBRD10150CT-13
Rectifier Diode, Schottky, 1 Phase, 2 Element, 5A, 150V V(RRM), Silicon, TO-252
Diodes Inc.SBR10200CTL-13
Rectifier Diode Super Barrier Rectifier 200V 10A 3-Pin(2+Tab) TO-252 T/R
Diodes Inc.MBRD10200CT-13
Rectifier Diode, Schottky, 1 Phase, 2 Element, 5A, 200V V(RRM), Silicon, TO-252
Descrizioni
Descrizioni di onsemi RURD4120S9A-F085 fornite dai suoi distributori.
Rectifier Diode, Avalanche, 1 Phase, 1 Element, 4A, 1200V V(RRM), Silicon, TO-252
Rectifier Diode Switching 1.2KV 4A 90ns Automotive 3-Pin(2+Tab) DPAK T/R
2.1V@4A 90ns Independent Type 4A 1.2kV TO-252 Fast Recovery / High Efficiency Diodes ROHS
Fast Recovery/Super Fast Recovery Diode Switch Diode
4A, 1200V Ultrafast Diodes/Tape Reel |Onsemi RURD4120S9A_F085
DIODE ULTRA FAST 1.2KV 4A DPAK
RECTIFIER, SINGLE, 1.2KV, 4A, TO-252;
DIODE GEN PURP 1.2KV 4A TO252AA
1.2KV 40A 90ns 100¦ÌA 4A TO-252AA 2.38mm
The RURD4120S9A_F085 are ultrafast diodes with soft recovery characteristics (trr < 70ns). They have lowforward voltage drop and are silicon nitride passivated ion-implanted epitaxial planar construction.These devices are intended for use as freewheeling/ clamping diodes and rectifiers in a variety of switching powersupplies and other power switching applications. Their low stored charge and ultrafast soft recovery minimize ringingand electrical noise in many power switching circuits reducing power loss in the switching transistors.
Alias del produttore
onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Cronologia dell'inventario
Tendenza a 3 mesi: -1.18%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
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Specifiche tecniche
Physical
Case/PackageTO-252-3
MountSurface Mount
Number of Terminals2
Weight260.37 mg
Technical
Average Rectified Current4 A
Capacitance15 pF
Element ConfigurationSingle
Forward Current4 A
Forward Voltage2.1 V
Max Forward Surge Current (Ifsm)40 A
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Output Current4 A
Max Power Dissipation50 W
Max Repetitive Reverse Voltage (Vrrm)1.2 kV
Max Reverse Voltage (DC)1.2 kV
Max Surge Current8 A
Min Operating Temperature-65 °C
Number of Elements1
Peak Non-Repetitive Surge Current40 A
Peak Reverse Current100 µA
Recovery Time70 ns
Reverse Recovery Time90 ns
Reverse Standoff Voltage1.2 kV
Reverse Voltage1.2 kV
Schedule B8541100080
Dimensions
Height2.517 mm
Schede tecniche e documenti
Scarica le schede tecniche e la documentazione del produttore per onsemi RURD4120S9A-F085.
Conformità
Classificazione ambientale
Radiation HardeningNo
RatingsAEC-Q101
REACH SVHCNo
RoHSCompliant
Dichiarazioni di conformità