onsemi NTD6415ANLT4G

NTD6415ANL: Power MOSFET 100V 23A 56 mohm Single N-Channel DPAK Logic Level
$ 1.356
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Datasheet7 pagine6 anni fa

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Master Electronics

onsemi

Newark

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Country of OriginMainland China, Malaysia
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2010-03-26
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)

Parti correlate

MOSFET N-CH 100V 23A DPAK-4 / N-Channel 100 V 23A (Tc) 83W (Tc) Surface Mount DPAK
STMicroelectronicsSTD26NF10
Power MOSFET, N Channel, 100 V, 25 A, 0.033 ohm, TO-252 (DPAK), Surface Mount
Single N-Channel Power MOSFET 100V, 23A, 55mΩ Power MOSFET 100V 23A 55 mOhm Single N-Channel DPAK
Single N-Channel Logic Level Power MOSFET 100V, 19A, 74mΩ
STMicroelectronicsSTD25NF10LT4
STD25NF10LT4 N-CHANNEL MOSFET TRANSISTOR, 25 A, 100 V, 3-PIN DPAK
InfineonAUIRLR3410TR
Single N-Channel 100 V 105 mOhm 34 nC Automotive HEXFET® Power Mosfet - TO-252-3

Descrizioni

Descrizioni di onsemi NTD6415ANLT4G fornite dai suoi distributori.

NTD6415ANL: Power MOSFET 100V 23A 56 mohm Single N-Channel DPAK Logic Level
NTD6415ANLT4G N-CHANNEL MOSFET TRANSISTOR, 23 A, 100 V, 3-PIN DPAK
Single N-Channel 100 V 83 W 20 nC Silicon Surface Mount Mosfet - TO-252-3
MOSFET, N-CH, 100V, 23A, TO-252; Transistor Polarity: N Channel; Continuous Drain Current Id: 23A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.044ohm; Rds(on) Test Voltage Vgs: 4.5V; Threshold Voltage Vgs: 2V; Power Dissipation Pd: 83W; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: Lead (27-Jun-2018)

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